757961 | IRF822 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
757962 | IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS Thomson Microelectronics |
757963 | IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS Thomson Microelectronics |
757964 | IRF822FI | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | ST Microelectronics |
757965 | IRF823 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
757966 | IRF823 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. | General Electric Solid State |
757967 | IRF823 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola |
757968 | IRF823 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
757969 | IRF823 | N-channel MOSFET, 450V, 2.2A | SGS Thomson Microelectronics |
757970 | IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS Thomson Microelectronics |
757971 | IRF8252 | 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters | International Rectifier |
757972 | IRF8252PBF-1 | 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package | International Rectifier |
757973 | IRF8252TRPBF | 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters | International Rectifier |
757974 | IRF8252TRPBF-1 | 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package | International Rectifier |
757975 | IRF82FI | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | ST Microelectronics |
757976 | IRF830 | POWER MOSFET | BayLinear |
757977 | IRF830 | 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET | Fairchild Semiconductor |
757978 | IRF830 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
757979 | IRF830 | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
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757980 | IRF830 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil |
757981 | IRF830 | Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
757982 | IRF830 | Power Field Effect Transistor | ON Semiconductor |
757983 | IRF830 | PowerMOS transistor Avalanche energy rated | Philips |
757984 | IRF830 | N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET | SGS Thomson Microelectronics |
757985 | IRF830 | N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET | ST Microelectronics |
757986 | IRF830 | 500 V,power field effect transistor | TRANSYS Electronics Limited |
757987 | IRF830 | N-CHANNEL ENHANCEMENT MODE | TRSYS |
757988 | IRF830-D | Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS | ON Semiconductor |
757989 | IRF8301M | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. | International Rectifier |
757990 | IRF8301MTRPBF | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. | International Rectifier |
757991 | IRF8302M | 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. | International Rectifier |
757992 | IRF8302MTR1PBF | 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. | International Rectifier |
757993 | IRF8304M | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. | International Rectifier |
757994 | IRF8304MTR1PBF | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. | International Rectifier |
757995 | IRF8306M | 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. | International Rectifier |
757996 | IRF8306MTR1PBF | 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. | International Rectifier |
757997 | IRF8308M | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. | International Rectifier |
757998 | IRF8308MTR1PBF | A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. | International Rectifier |
757999 | IRF830A | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
758000 | IRF830AL | 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |