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Datasheets found :: 1696699
Page: << | 18390 | 18391 | 18392 | 18393 | 18394 | 18395 | 18396 | 18397 | 18398 | 18399 | 18400 | >>
No.Part NameDescriptionManufacturer
735761IRF150100V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
735762IRF15040A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFETIntersil
735763IRF150Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735764IRF150N-CHANNEL POWER MOSFETSSamsung Electronic
735765IRF150N-CHANNEL POWER MOSFETSemeLAB
735766IRF150-153N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
735767IRF150330V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
735768IRF1503L30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
735769IRF1503LPBF30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
735770IRF1503PBF30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
735771IRF1503S30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
735772IRF1503STRLPBF30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
735773IRF150CFTrans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735774IRF150SMDN-CHANNEL POWER MOSFETSemeLAB
735775IRF151N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
735776IRF151N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A.General Electric Solid State
735777IRF15133A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
735778IRF151Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735779IRF151N-CHANNEL POWER MOSFETSSamsung Electronic


735780IRF152N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
735781IRF152N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A.General Electric Solid State
735782IRF15233A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
735783IRF152Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735784IRF152N-CHANNEL POWER MOSFETSSamsung Electronic
735785IRF152RTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735786IRF153N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
735787IRF153N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A.General Electric Solid State
735788IRF15333A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
735789IRF153Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735790IRF153N-CHANNEL POWER MOSFETSSamsung Electronic
735791IRF153RTrans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
735792IRF160775V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
735793IRF1607PBF75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
735794IRF1704Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì)International Rectifier
735795IRF1730GPower MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)International Rectifier
735796IRF190220V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
735797IRF1902TR20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
735798IRF1902TRPBF20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
735799IRF1902UPBF20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer marketInternational Rectifier
735800IRF20050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc


Datasheets found :: 1696699
Page: << | 18390 | 18391 | 18392 | 18393 | 18394 | 18395 | 18396 | 18397 | 18398 | 18399 | 18400 | >>


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