735761 | IRF150 | 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
735762 | IRF150 | 40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET | Intersil |
735763 | IRF150 | Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735764 | IRF150 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
735765 | IRF150 | N-CHANNEL POWER MOSFET | SemeLAB |
735766 | IRF150-153 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
735767 | IRF1503 | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
735768 | IRF1503L | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
735769 | IRF1503LPBF | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
735770 | IRF1503PBF | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
735771 | IRF1503S | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
735772 | IRF1503STRLPBF | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
735773 | IRF150CF | Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735774 | IRF150SMD | N-CHANNEL POWER MOSFET | SemeLAB |
735775 | IRF151 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
735776 | IRF151 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. | General Electric Solid State |
735777 | IRF151 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
735778 | IRF151 | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735779 | IRF151 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
|
735780 | IRF152 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
735781 | IRF152 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. | General Electric Solid State |
735782 | IRF152 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
735783 | IRF152 | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735784 | IRF152 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
735785 | IRF152R | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735786 | IRF153 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
735787 | IRF153 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. | General Electric Solid State |
735788 | IRF153 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
735789 | IRF153 | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735790 | IRF153 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
735791 | IRF153R | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
735792 | IRF1607 | 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
735793 | IRF1607PBF | 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
735794 | IRF1704 | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì) | International Rectifier |
735795 | IRF1730G | Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) | International Rectifier |
735796 | IRF1902 | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
735797 | IRF1902TR | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
735798 | IRF1902TRPBF | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
735799 | IRF1902UPBF | 20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market | International Rectifier |
735800 | IRF200 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |