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Datasheets found :: 1675338
Page: << | 17945 | 17946 | 17947 | 17948 | 17949 | 17950 | 17951 | 17952 | 17953 | 17954 | 17955 | >>
No.Part NameDescriptionManufacturer
717961IRF241N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A.General Electric Solid State
717962IRF24116A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
717963IRF241N-CHANNEL POWER MOSFETSamsung Electronic
717964IRF242N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
717965IRF24216A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
717966IRF242N-CHANNEL POWER MOSFETSamsung Electronic
717967IRF243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
717968IRF243N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A.General Electric Solid State
717969IRF24316A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
717970IRF243N-CHANNEL POWER MOSFETSamsung Electronic
717971IRF24414A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
717972IRF24514A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
717973IRF24614A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
717974IRF24714A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
717975IRF250N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
717976IRF250200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
717977IRF25030A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFETIntersil
717978IRF250Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717979IRF250N-CHANNEL POWER MOSFETSSamsung Electronic


717980IRF250N-CHANNEL POWER MOSFETSemeLAB
717981IRF250CFTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717982IRF250FITrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717983IRF250RTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717984IRF250SMDN.CHANNEL POWER MOSFETSemeLAB
717985IRF251N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
717986IRF25125A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
717987IRF251Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717988IRF251N-CHANNEL POWER MOSFETSSamsung Electronic
717989IRF252N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
717990IRF25225A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
717991IRF252Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717992IRF252N-CHANNEL POWER MOSFETSSamsung Electronic
717993IRF252RTrans MOSFET 200V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717994IRF253N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
717995IRF25325A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
717996IRF253Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
717997IRF253N-CHANNEL POWER MOSFETSSamsung Electronic
717998IRF254250V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
717999IRF280440V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
718000IRF2804L40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier


Datasheets found :: 1675338
Page: << | 17945 | 17946 | 17947 | 17948 | 17949 | 17950 | 17951 | 17952 | 17953 | 17954 | 17955 | >>


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