| 71401 | 2N6653 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | SemeLAB |
| 71402 | 2N6654 | Trans GP BJT NPN 350V 20A | New Jersey Semiconductor |
| 71403 | 2N6654 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 71404 | 2N6654 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SemeLAB |
| 71405 | 2N6655 | Bipolar NPN Device | SemeLAB |
| 71406 | 2N6659 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 71407 | 2N6659 | Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD | New Jersey Semiconductor |
| 71408 | 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 71409 | 2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 71410 | 2N6660 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | New Jersey Semiconductor |
| 71411 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 71412 | 2N6660 | N-Channel 60-V (D-S) Single and Quad MOSFETs | Vishay |
| 71413 | 2N6661 | N-Channel Enhancement Mode MOSFETs | Microchip |
| 71414 | 2N6661 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 71415 | 2N6661 | Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 | New Jersey Semiconductor |
| 71416 | 2N6661 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 71417 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 71418 | 2N6661 | N-Channel 80-V and 90-V (D-S) MOSFETS | Vishay |
| 71419 | 2N6666 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
|
| 71420 | 2N6666 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71421 | 2N6666 | 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. | General Electric Solid State |
| 71422 | 2N6666 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 71423 | 2N6667 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 71424 | 2N6667 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71425 | 2N6667 | 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 71426 | 2N6667 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 71427 | 2N6667 | Trans Darlington PNP 60V 10A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 71428 | 2N6667 | Power 8A 60V Darlington PNP | ON Semiconductor |
| 71429 | 2N6667-D | Darlington Silicon Power Transistors | ON Semiconductor |
| 71430 | 2N6668 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 71431 | 2N6668 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71432 | 2N6668 | 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 71433 | 2N6668 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 71434 | 2N6668 | Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 71435 | 2N6668 | Power 8A 80V Darlington PNP | ON Semiconductor |
| 71436 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 71437 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 71438 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | ST Microelectronics |
| 71439 | 2N6671 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 71440 | 2N6671 | 5 A SwitchMax power transistor. High voltage N-P-N type. | General Electric Solid State |
