| 71201 | 2N6519 | High Voltage Transistor 625mW | Micro Commercial Components |
| 71202 | 2N6519 | High Voltage Transistors | ON Semiconductor |
| 71203 | 2N6519 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 71204 | 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | USHA India LTD |
| 71205 | 2N6519BU | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 71206 | 2N6519RLRA | High Voltage Transistors | ON Semiconductor |
| 71207 | 2N6519TA | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 71208 | 2N651A | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
| 71209 | 2N652 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
| 71210 | 2N6520 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 71211 | 2N6520 | 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE | Continental Device India Limited |
| 71212 | 2N6520 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | Diodes |
| 71213 | 2N6520 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild Semiconductor |
| 71214 | 2N6520 | Ic=500mA, Vce=10V transistor | MCC |
| 71215 | 2N6520 | High Voltage Transistor 625mW | Micro Commercial Components |
| 71216 | 2N6520 | High Voltage Transistors | ON Semiconductor |
| 71217 | 2N6520 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 71218 | 2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | USHA India LTD |
| 71219 | 2N6520 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | Zetex Semiconductors |
|
| 71220 | 2N6520BU | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 71221 | 2N6520RL1 | High Voltage Transistors | ON Semiconductor |
| 71222 | 2N6520RLRA | High Voltage Transistors | ON Semiconductor |
| 71223 | 2N6520RLRM | High Voltage Transistors | ON Semiconductor |
| 71224 | 2N6520TA | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 71225 | 2N652A | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
| 71226 | 2N653 | Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 | New Jersey Semiconductor |
| 71227 | 2N6530 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71228 | 2N6530 | 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 71229 | 2N6530 | Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
| 71230 | 2N6530 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 71231 | 2N6531 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71232 | 2N6531 | 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. | General Electric Solid State |
| 71233 | 2N6531 | Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
| 71234 | 2N6531 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 71235 | 2N6532 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71236 | 2N6532 | 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 71237 | 2N6532 | Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
| 71238 | 2N6532 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 71239 | 2N6533 | Leaded Power Transistor Darlington | Central Semiconductor |
| 71240 | 2N6533 | 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. | General Electric Solid State |
