| 66721 | 2N3858A | General Purpose Bipolar Transistor | New Jersey Semiconductor |
| 66722 | 2N3859 | Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. | General Electric Solid State |
| 66723 | 2N3859 | Trans GP BJT NPN 80V 5A 3-Pin TO-59 | New Jersey Semiconductor |
| 66724 | 2N3859A | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66725 | 2N3859A | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66726 | 2N3859A | Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. | General Electric Solid State |
| 66727 | 2N3859A | Trans GP BJT NPN 60V 0.5A 3-Pin TO-92 Bulk | New Jersey Semiconductor |
| 66728 | 2N3859A_D75Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66729 | 2N3860 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66730 | 2N3860 | Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. | General Electric Solid State |
| 66731 | 2N3860 | Chip: 4.5V; geometry 0003; polarity NPN | Semicoa Semiconductor |
| 66732 | 2N3866 | NPN SILICON HIGH FREQUENCY TRANSISTOR | Advanced Semiconductor |
| 66733 | 2N3866 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66734 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 66735 | 2N3866 | Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 | New Jersey Semiconductor |
| 66736 | 2N3866 | Silicon planar epitaxial overlay transistors | Philips |
| 66737 | 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 66738 | 2N3866A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 66739 | 2N3866A | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
|
| 66740 | 2N3866AF | Chip: geometry 1007; polarity NPN | Semicoa Semiconductor |
| 66741 | 2N3866AUB | NPN Transistor | Microsemi |
| 66742 | 2N3866AUB | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 66743 | 2N3866UB | NPN Transistor | Microsemi |
| 66744 | 2N3867 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66745 | 2N3867 | 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. | Continental Device India Limited |
| 66746 | 2N3867 | PNP Transistor | Microsemi |
| 66747 | 2N3867 | PNP Transistor | Microsemi |
| 66748 | 2N3867 | Trans GP BJT PNP 40V 3A 3-Pin TO-5 | New Jersey Semiconductor |
| 66749 | 2N3867S | PNP Transistor | Microsemi |
| 66750 | 2N3868 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66751 | 2N3868 | PNP Transistor | Microsemi |
| 66752 | 2N3868 | PNP Transistor | Microsemi |
| 66753 | 2N3868 | Trans GP BJT PNP 60V 3A 3-Pin TO-5 | New Jersey Semiconductor |
| 66754 | 2N3868S | PNP Transistor | Microsemi |
| 66755 | 2N3868S | Trans GP BJT PNP 60V 3A 3-Pin TO-39 | New Jersey Semiconductor |
| 66756 | 2N3868U4 | PNP Transistor | Microsemi |
| 66757 | 2N3868V | Trans GP BJT PNP 60V 3A 3-Pin TO-39 | New Jersey Semiconductor |
| 66758 | 2N3870 | 35A silicon controlled rectifier. Vrsom(non-rep) 150V. | General Electric Solid State |
| 66759 | 2N3870 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 66760 | 2N3871 | 35A silicon controlled rectifier. Vrsom(non-rep) 330V. | General Electric Solid State |
