| 66001 | 2N3423 | BIPOLAR DEVICES WITH POLARITY NPN | New Jersey Semiconductor |
| 66002 | 2N3424 | Trans GP BJT NPN 60V 3A 3-Pin TO-5 | New Jersey Semiconductor |
| 66003 | 2N342A | Trans GP BJT NPN 60V 3A 3-Pin TO-5 | New Jersey Semiconductor |
| 66004 | 2N343 | Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 66005 | 2N3439 | HIGH VOLTAGE AMPLIFIERS | Boca Semiconductor Corporation |
| 66006 | 2N3439 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66007 | 2N3439 | 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. | Continental Device India Limited |
| 66008 | 2N3439 | High-voltage silicon N-P-N planar transistor. | General Electric Solid State |
| 66009 | 2N3439 | NPN Transistor | Microsemi |
| 66010 | 2N3439 | Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box | New Jersey Semiconductor |
| 66011 | 2N3439 | HIGH VOLTAGE NPN TRANSISTORS | SemeLAB |
| 66012 | 2N3439 | SILICON NPN TRANSISTORS | SGS Thomson Microelectronics |
| 66013 | 2N3439 | SILICON NPN TRANSISTORS | SGS Thomson Microelectronics |
| 66014 | 2N3439 | SILICON NPN TRANSISTORS | ST Microelectronics |
| 66015 | 2N3439CSM4 | HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | SemeLAB |
| 66016 | 2N3439CSM4R | HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | SemeLAB |
| 66017 | 2N3439E3 | NPN Transistor | Microsemi |
| 66018 | 2N3439E4 | NPN Transistor | Microsemi |
| 66019 | 2N3439L | NPN Transistor | Microsemi |
|
| 66020 | 2N3439LE3 | NPN Transistor | Microsemi |
| 66021 | 2N3439U4 | NPN Transistor | Microsemi |
| 66022 | 2N3439U4E3 | NPN Transistor | Microsemi |
| 66023 | 2N3439UA | NPN Transistor | Microsemi |
| 66024 | 2N3439UAE3 | NPN Transistor | Microsemi |
| 66025 | 2N343A | Trans GP BJT NPN 350V 1A 3-Pin TO-5 | New Jersey Semiconductor |
| 66026 | 2N343B | Trans GP BJT NPN 350V 1A 3-Pin TO-5 | New Jersey Semiconductor |
| 66027 | 2N343C | Trans GP BJT NPN 350V 1A 3-Pin TO-5 | New Jersey Semiconductor |
| 66028 | 2N3440 | HIGH VOLTAGE AMPLIFIERS | Boca Semiconductor Corporation |
| 66029 | 2N3440 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66030 | 2N3440 | 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. | Continental Device India Limited |
| 66031 | 2N3440 | High-voltage silicon N-P-N planar transistor. | General Electric Solid State |
| 66032 | 2N3440 | NPN Transistor | Microsemi |
| 66033 | 2N3440 | Trans GP BJT NPN 250V 1A 3-Pin TO-39 | New Jersey Semiconductor |
| 66034 | 2N3440 | HIGH VOLTAGE NPN TRANSISTORS | SemeLAB |
| 66035 | 2N3440 | SILICON NPN TRANSISTORS | SGS Thomson Microelectronics |
| 66036 | 2N3440 | SILICON NPN TRANSISTORS | SGS Thomson Microelectronics |
| 66037 | 2N3440 | SILICON NPN TRANSISTORS | ST Microelectronics |
| 66038 | 2N3440CSM4R | HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | SemeLAB |
| 66039 | 2N3440E3 | NPN Transistor | Microsemi |
| 66040 | 2N3440E4 | NPN Transistor | Microsemi |
