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Datasheets found :: 1726161
Page: << | 1566 | 1567 | 1568 | 1569 | 1570 | 1571 | 1572 | 1573 | 1574 | 1575 | 1576 | >>
No.Part NameDescriptionManufacturer
628011S73Germanium GOLDBOND diodeTOSHIBA
628021S73AGeneral-purpose switching diodeTOSHIBA
628031S73AGermanium GOLDBOND diodeTOSHIBA
628041S750Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer Hitachi Semiconductor
628051S752HSilicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power SourceHitachi Semiconductor
628061S753HSilicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power SourceHitachi Semiconductor
628071S754HSilicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power SourceHitachi Semiconductor
628081S755HSilicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power SourceHitachi Semiconductor
628091S756HSilicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power SourceHitachi Semiconductor
628101S757HSilicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628111S758HSilicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628121S759HSilicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628131S760HSilicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power SourceHitachi Semiconductor
628141S761HSilicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628151S762HSilicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628161S763HSilicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628171S764HSilicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628181S765HSilicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power SourceHitachi Semiconductor
628191S77Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damperHitachi Semiconductor


628201S770Mobile alternator diodeTOSHIBA
628211S770RMobile alternator diodeTOSHIBA
628221S777Germanium rectifier - Tr TV DamperTOSHIBA
628231S77HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed SwitchingHitachi Semiconductor
628241S78HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed SwitchingHitachi Semiconductor
628251S79HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed SwitchingHitachi Semiconductor
628261S8TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIERDC Components
628271S81 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)Panjit International Inc
628281S80Germanium Point Contact Diode, intended for use as a General DetectorHitachi Semiconductor
628291S801.0 Amp Schottky Barrier Rectifier 20 to 100 VoltsMicro Commercial Components
628301S80Schottky DiodeRectron Semiconductor
628311S81General-purpose detector diodeTOSHIBA
628321S82General-purpose detector diodeTOSHIBA
628331S84Silicon Diffused RectifierHitachi Semiconductor
628341S84HSilicon Diffused for High Voltage SwitchingHitachi Semiconductor
628351S85Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance Hitachi Semiconductor
628361S85HSilicon Diffused Junction Diode, Varicap - Voltage Variable CapacitanceHitachi Semiconductor
628371S86Variable capacitance diodeTOSHIBA
628381S87General-purpose switching diodeTOSHIBA
628391S88General-purpose switching diodeTOSHIBA
628401S89General-purpose switching diodeTOSHIBA


Datasheets found :: 1726161
Page: << | 1566 | 1567 | 1568 | 1569 | 1570 | 1571 | 1572 | 1573 | 1574 | 1575 | 1576 | >>


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