| 596641 | F29C51004T70TI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596642 | F29C51004T90J | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596643 | F29C51004T90JI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596644 | F29C51004T90P | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596645 | F29C51004T90PI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596646 | F29C51004T90T | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596647 | F29C51004T90TI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory | etc |
| 596648 | F2W005G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596649 | F2W01G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596650 | F2W02G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596651 | F2W04G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596652 | F2W06G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596653 | F2W08G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596654 | F2W10G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS | EIC discrete Semiconductors |
| 596655 | F3 SERIES | TIMING EXTRACTION BANDPASS FILTER (1.5 to 100MHz) | Fujitsu Microelectronics |
| 596656 | F30 | Case, shape and dimensions | IPRS Baneasa |
| 596657 | F30 | Diode Switching 3KV 0.35A 2-Pin Case G-66 | New Jersey Semiconductor |
| 596658 | F30 | Shape and dimensions SITELESC package | SESCOSEM |
| 596659 | F3002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
|
| 596660 | F307 | Silicon rectifier diode | IPRS Baneasa |
| 596661 | F307 | Silicon Rectifier Diode 0.75A 600V | IPRS Baneasa |
| 596662 | F307 | 0.75A 600V Rectifier Diode | IPRS Baneasa |
| 596663 | F307PI | 0.75A 600V Rectifier Diode | IPRS Baneasa |
| 596664 | F308 | Previous Vectron Model Numbers | Vectron |
| 596665 | F30D05 | POWER RECTIFIERS(30A,50-200V) | MOSPEC Semiconductor |
| 596666 | F30D10 | POWER RECTIFIERS(30A,50-200V) | MOSPEC Semiconductor |
| 596667 | F30D15 | POWER RECTIFIERS(30A,50-200V) | MOSPEC Semiconductor |
| 596668 | F30D20 | POWER RECTIFIERS(30A,50-200V) | MOSPEC Semiconductor |
| 596669 | F30D30 | POWER RECTIFIERS(30A,300-600V) | MOSPEC Semiconductor |
| 596670 | F30D40 | POWER RECTIFIERS(30A,300-600V) | MOSPEC Semiconductor |
| 596671 | F30D50 | POWER RECTIFIERS(30A,300-600V) | MOSPEC Semiconductor |
| 596672 | F30D60 | POWER RECTIFIERS(30A,300-600V) | MOSPEC Semiconductor |
| 596673 | F31 | Case, shape and dimensions | IPRS Baneasa |
| 596674 | F31 | Shape and dimensions SITELESC package | SESCOSEM |
| 596675 | F3101 | A Major Advance in RTD Technology | etc |
| 596676 | F3102 | A Major Advance in RTD Technology | etc |
| 596677 | F3105 | A Major Advance in RTD Technology | etc |
| 596678 | F3107 | A Major Advance in RTD Technology | etc |
| 596679 | F3131 | A Major Advance in RTD Technology | etc |
| 596680 | F3132 | A Major Advance in RTD Technology | etc |
