| 596201 | F1069 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596202 | F106U | Shape and dimensions SITELESC package | SESCOSEM |
| 596203 | F107 | Silicon rectifier diode | IPRS Baneasa |
| 596204 | F107 | Si RECTIFIER DIODE | IPRS Baneasa |
| 596205 | F107 | Silicon Rectifier Diode 0.75A 100V | IPRS Baneasa |
| 596206 | F107 | 0.75A 100V Rectifier Diode | IPRS Baneasa |
| 596207 | F1070 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596208 | F1072 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596209 | F1074 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596210 | F1076 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596211 | F1077 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596212 | F107PI | 0.75A 100V Rectifier Diode | IPRS Baneasa |
| 596213 | F1081 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596214 | F109 | Shape and dimensions SITELESC package | SESCOSEM |
| 596215 | F10920FR | FRD | Nihon |
| 596216 | F10a to F79a | TESLA package shape and dimensions | Tesla Elektronicke |
| 596217 | F10AC | 1A 1000V Controlled Avalanche Rectifier Diode | IPRS Baneasa |
| 596218 | F10B | 10 Lead Ceramic Flatpack | National Semiconductor |
| 596219 | F10C05 | FAST RECOVERY RECTIFIER | MOSPEC Semiconductor |
|
| 596220 | F10C10 | FAST RECOVERY RECTIFIER | MOSPEC Semiconductor |
| 596221 | F10C15 | FAST RECOVERY RECTIFIER | MOSPEC Semiconductor |
| 596222 | F10C20 | FAST RECOVERY RECTIFIER | MOSPEC Semiconductor |
| 596223 | F10h to F79h | TESLA package shape and dimensions | Tesla Elektronicke |
| 596224 | F10L60U | Super Fast Recovery Rectifiers(600V 10A) | Shindengen |
| 596225 | F10M | Case shape and dimensions | IPRS Baneasa |
| 596226 | F10M | Shape and dimensions SITELESC package | SESCOSEM |
| 596227 | F10P20FR | Low Forward Voltage drop Diode | Nihon |
| 596228 | F10P40FR | FRD DUAL DIODES - ANODE COMMON | Nihon |
| 596229 | F10S30 | LVX Series Power MOSFET | Unknow |
| 596230 | F110 to F153 | TESLA package shape and dimensions | Tesla Elektronicke |
| 596231 | F1107 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596232 | F1108 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596233 | F1116 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596234 | F112 | Silicon rectifier diode | IPRS Baneasa |
| 596235 | F112 | Silicon Rectifier Diode 2A 1000V | IPRS Baneasa |
| 596236 | F112 | 2A 1000V Rectifier Diode | IPRS Baneasa |
| 596237 | F112 | Shape and dimensions SITELESC package | SESCOSEM |
| 596238 | F1120 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596239 | F116 | Shape and dimensions SITELESC package | SESCOSEM |
| 596240 | F117 | Case, shape and dimensions | IPRS Baneasa |
