| 389561 | CM50TF-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
| 389562 | CM50TF-24H | Six-IGBT IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389563 | CM50TF-28H | MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Corporation |
| 389564 | CM50TF-28H | IGBT Modules:1400V | Mitsubishi Electric Corporation |
| 389565 | CM50TF-28H | Six-IGBT IGBTMOD 50 Amperes/1400 Volts | Powerex Power Semiconductors |
| 389566 | CM50TJ-24F | Trench Gate Design Six IGBTMOD¢â 50 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389567 | CM50TU-24F | IGBT Modules:1200V | Mitsubishi Electric Corporation |
| 389568 | CM50TU-24F | MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Corporation |
| 389569 | CM50TU-24F | Trench Gate Design Six IGBTMOD¢â 50 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389570 | CM50TU-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
| 389571 | CM50TU-24H | IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Corporation |
| 389572 | CM50TU-24H | Six IGBTMOD 50 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389573 | CM50TU-34KA | IGBT Modules:1700V | Mitsubishi Electric Corporation |
| 389574 | CM50TU-34KA | Six IGBTMOD 50 Amperes/1700 Volts | Powerex Power Semiconductors |
| 389575 | CM5160 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 389576 | CM520813 | SCR/Diode POW-R-BLOK¢â Modules 130 Amperes/800 Volts | Powerex Power Semiconductors |
| 389577 | CM521213 | SCR/Diode POW-R-BLOK¢â Modules 130 Amperes/1200-1600 Volts | Powerex Power Semiconductors |
| 389578 | CM521613 | SCR/Diode POW-R-BLOK¢â Modules 130 Amperes/1200-1600 Volts | Powerex Power Semiconductors |
| 389579 | CM530813 | Dual SCR POW-R-BLOK¢â Modules 130 Amperes/800 Volts | Powerex Power Semiconductors |
|
| 389580 | CM530820 | Dual SCR POW-R-BLOK¢â Modules 200 Amperes/800 Volts | Powerex Power Semiconductors |
| 389581 | CM531213 | Dual SCR POW-R-BLOK¢â Modules 200 Amperes/800 Volts | Powerex Power Semiconductors |
| 389582 | CM531220 | Dual SCR POW-R-BLOK¢â Modules 200 Amperes/1200-1600 Volts | Powerex Power Semiconductors |
| 389583 | CM531613 | Dual SCR POW-R-BLOK¢â Modules 200 Amperes/800 Volts | Powerex Power Semiconductors |
| 389584 | CM531620 | Dual SCR POW-R-BLOK¢â Modules 200 Amperes/1200-1600 Volts | Powerex Power Semiconductors |
| 389585 | CM5583 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 389586 | CM5943 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 389587 | CM5S1015 | Molded Ultra-Mini DYAD | Clare Inc |
| 389588 | CM5S1020 | Molded Ultra-Mini DYAD | Clare Inc |
| 389589 | CM5S1030 | Molded Ultra-Mini DYAD | Clare Inc |
| 389590 | CM5S1520 | Molded Ultra-Mini DYAD | Clare Inc |
| 389591 | CM5S1525 | Molded Ultra-Mini DYAD | Clare Inc |
| 389592 | CM5S2025 | Molded Ultra-Mini DYAD | Clare Inc |
| 389593 | CM600DU-24F | IGBT Modules:1200V | Mitsubishi Electric Corporation |
| 389594 | CM600DU-24F | Dual IGBTMOD 600 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389595 | CM600DU-24NF | HIGH POWER SWITCHING USE | Mitsubishi Electric Corporation |
| 389596 | CM600DU-5F | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 389597 | CM600DU-5F | Dual IGBTMOD 600 Amperes/1200 Volts | Powerex Power Semiconductors |
| 389598 | CM600DY-12NF | HIGH POWER SWITCHING USE | Mitsubishi Electric Corporation |
| 389599 | CM600DY-24A | HIGH POWER SWITCHING USE | Mitsubishi Electric Corporation |
| 389600 | CM600DY-34H | High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules | Mitsubishi Electric Corporation |
