| 37601 | 1N5520B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 37602 | 1N5520B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 37603 | 1N5520B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 37604 | 1N5520B | Low Voltage Avalanche Zener | Microsemi |
| 37605 | 1N5520B | Low Voltage Avalanche Zener | Microsemi |
| 37606 | 1N5520B | Diode Zener Single 3.9V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37607 | 1N5520B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 37608 | 1N5520B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 37609 | 1N5520B-1 | Low Voltage Avalanche Zener | Microsemi |
| 37610 | 1N5520B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37611 | 1N5520BUR | Zener Voltage Regulator Diode | Microsemi |
| 37612 | 1N5520BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37613 | 1N5520BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37614 | 1N5520C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37615 | 1N5520C | Diode Zener Single 3.9V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37616 | 1N5520C-1 | Low Voltage Avalanche Zener | Microsemi |
| 37617 | 1N5520C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37618 | 1N5520CUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37619 | 1N5520CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
|
| 37620 | 1N5520D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37621 | 1N5520D | Diode Zener Single 3.9V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37622 | 1N5520D-1 | Low Voltage Avalanche Zener | Microsemi |
| 37623 | 1N5520D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37624 | 1N5520DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37625 | 1N5520DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37626 | 1N5521 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37627 | 1N5521 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 37628 | 1N5521 | Low Voltage Avalanche Zener | Microsemi |
| 37629 | 1N5521 | Diode Zener Single 4.3V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37630 | 1N5521A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 37631 | 1N5521A | Low Voltage Avalanche Zener | Microsemi |
| 37632 | 1N5521A | Diode Zener Single 4.3V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37633 | 1N5521A-1 | Low Voltage Avalanche Zener | Microsemi |
| 37634 | 1N5521A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37635 | 1N5521AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37636 | 1N5521AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37637 | 1N5521B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 37638 | 1N5521B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 37639 | 1N5521B | Low Voltage Avalanche Zener | Microsemi |
| 37640 | 1N5521B | Low Voltage Avalanche Zener | Microsemi |
