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Datasheets found :: 1675338
Page: << | 8878 | 8879 | 8880 | 8881 | 8882 | 8883 | 8884 | 8885 | 8886 | 8887 | 8888 | >>
No.Part NameDescriptionManufacturer
355281CM75TF-28HIGBT Modules:1400VMitsubishi Electric Corporation
355282CM75TF-28HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
355283CM75TF-28HSix-IGBT IGBTMOD 75 Amperes/1400 VoltsPowerex Power Semiconductors
355284CM75TJ-24FTrench Gate Design Six IGBTMOD¢â 75 Amperes/1200 VoltsPowerex Power Semiconductors
355285CM75TU-12FIGBT Modules: 600VMitsubishi Electric Corporation
355286CM75TU-12FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
355287CM75TU-12FTrench Gate Design Six IGBTMOD¢â 75 Amperes/600 VoltsPowerex Power Semiconductors
355288CM75TU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
355289CM75TU-12HIGBT Modules: 600VMitsubishi Electric Corporation
355290CM75TU-12HSix IGBTMOD 75 Amperes/600 VoltsPowerex Power Semiconductors
355291CM75TU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
355292CM75TU-24FIGBT Modules:1200VMitsubishi Electric Corporation
355293CM75TU-24FTrench Gate Design Six IGBTMOD¢â 75 Amperes/1200 VoltsPowerex Power Semiconductors
355294CM75TU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
355295CM75TU-24HIGBT Modules:1200VMitsubishi Electric Corporation
355296CM75TU-24HSix IGBTMOD 75 Amperes/1200 VoltsPowerex Power Semiconductors
355297CM75TU-34KAIGBT Modules:1700VMitsubishi Electric Corporation
355298CM75TU-34KASix IGBTMOD 75 Amperes/1700 VoltsPowerex Power Semiconductors
355299CM800DU-12HDual IGBTMOD 800 Amperes/600 VoltsPowerex Power Semiconductors


355300CM800DZ-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355301CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
355302CM800E2Z-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355303CM800HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
355304CM800HA-24HIGBT Modules:1200VMitsubishi Electric Corporation
355305CM800HA-24HSingle IGBTMOD 800 Amperes/1200 VoltsPowerex Power Semiconductors
355306CM800HA-28HSingle IGBTMOD 800 Amperes/1400 VoltsPowerex Power Semiconductors
355307CM800HA-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355308CM800HA-34HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
355309CM800HA-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355310CM800HA-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355311CM800HB-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355312CM800HB-50HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
355313CM800HB-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
355314CM800HB-66HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
355315CM82C54CMOS Programmable Interval TimerIntersil
355316CM82C54-10CMOS Programmable Interval TimerIntersil
355317CM82C54-12CMOS Programmable Interval TimerIntersil
355318CM82C59ACMOS Priority Interrupt ControllerIntersil
355319CM82C59A-12CMOS Priority Interrupt ControllerIntersil
355320CM82C59A-5CMOS Priority Interrupt ControllerIntersil


Datasheets found :: 1675338
Page: << | 8878 | 8879 | 8880 | 8881 | 8882 | 8883 | 8884 | 8885 | 8886 | 8887 | 8888 | >>


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