| 32281 | 1N4595 | Rectifier Diode 1200V 150A | Motorola |
| 32282 | 1N4595 | Diode Switching 1.2KV 150A 2-Pin DO-8 | New Jersey Semiconductor |
| 32283 | 1N4595 | 1200V, 150A general purpose single diode | Powerex Power Semiconductors |
| 32284 | 1N4595R | Standard Rectifier (trr more than 500ns) | Microsemi |
| 32285 | 1N4595R | 1200V, 150A general purpose single diode | Powerex Power Semiconductors |
| 32286 | 1N4596 | Standard Rectifier (trr more than 500ns) | Microsemi |
| 32287 | 1N4596 | Rectifier Diode 1400V 150A | Motorola |
| 32288 | 1N4596 | Diode Switching 1.4KV 150A 2-Pin DO-8 | New Jersey Semiconductor |
| 32289 | 1N4596 | 1400V, 150A general purpose single diode | Powerex Power Semiconductors |
| 32290 | 1N4596R | Standard Rectifier (trr more than 500ns) | Microsemi |
| 32291 | 1N4596R | 1400V, 150A general purpose single diode | Powerex Power Semiconductors |
| 32292 | 1N4597 | Rectifier Diode 5000V 0.025A | Motorola |
| 32293 | 1N4598 | Varactor Diode | Motorola |
| 32294 | 1N4599 | Varactor Diode | Motorola |
| 32295 | 1N459A | 175 V, 500 mW low leakage diode | BKC International Electronics |
| 32296 | 1N459A | SILICON DIODE | Central Semiconductor |
| 32297 | 1N459A | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32298 | 1N459A | Signal or Computer Diode | Microsemi |
| 32299 | 1N459A | Silicon Signal Diode | Motorola |
|
| 32300 | 1N459A | High Conductance Low Leakage Diode | National Semiconductor |
| 32301 | 1N459A | Diode 200V 0.5A 2-Pin DO-35 | New Jersey Semiconductor |
| 32302 | 1N459A | Silicon Diode Case Style DO-7 | Transitron Electronic |
| 32303 | 1N459Ae3 | Signal or Computer Diode | Microsemi |
| 32304 | 1N459ATR | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32305 | 1N459A_L99Z | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32306 | 1N459A_T50R | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32307 | 1N459B | Diode 200V 0.5A 2-Pin DO-35 | New Jersey Semiconductor |
| 32308 | 1N459C | Diode 200V 0.5A 2-Pin DO-35 | New Jersey Semiconductor |
| 32309 | 1N459D | Diode 200V 0.5A 2-Pin DO-35 | New Jersey Semiconductor |
| 32310 | 1N459E3 | Signal or Computer Diode | Microsemi |
| 32311 | 1N459TR | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32312 | 1N459_T50R | High Conductance Low Leakage Diode | Fairchild Semiconductor |
| 32313 | 1N46 | Germanium diode | IPRS Baneasa |
| 32314 | 1N46 | Gold Bond Germanium Diode | ITT Semiconductors |
| 32315 | 1N46 | Germanium Signal diode | Motorola |
| 32316 | 1N46 | GOLD BOUNDED GERMANUM DIODE | New Jersey Semiconductor |
| 32317 | 1N460 | Silicon Planar Diode | ITT Semiconductors |
| 32318 | 1N460 | Silicon Signal Diode | Motorola |
| 32319 | 1N4600 | Microwave Mixer f=13,300 MHz, NF=9.5 dB | Motorola |
| 32320 | 1N4601 | Microwave Mixer f=13,300 MHz, NF=8.8 dB | Motorola |
