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Datasheets found :: 1726161
Page: << | 7884 | 7885 | 7886 | 7887 | 7888 | 7889 | 7890 | 7891 | 7892 | 7893 | 7894 | >>
No.Part NameDescriptionManufacturer
315521BF459NPN Silicon RF planar transistor for video and AF output stagesSiemens
315522BF459NPN SILICON RF TRANSISTORSSiemens
315523BF459HIGH VOLTAGE VIDEO AMPLIFIERSST Microelectronics
315524BF459Silicon NPN triple diffused transistorTOSHIBA
315525BF459Tranzystor wielkiej częstotliwościUltra CEMI
315526BF469 2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470Continental Device India Limited
315527BF469Silicon NPN Epitaxial-Planar High Voltage TransistorIPRS Baneasa
315528BF469Trans GP BJT NPN 250V 0.05A 3-Pin TO-126New Jersey Semiconductor
315529BF469NPN high-voltage transistorsPhilips
315530BF469NPN SILICON PLANAR TRANSISTORSSiemens
315531BF469Silicon NPN triple diffused transistorTOSHIBA
315532BF469Tranzystor wielkiej częstotliwościUltra CEMI
315533BF470 2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469Continental Device India Limited
315534BF470Silicon PNP Planar-Epitaxial High Voltage TransistorIPRS Baneasa
315535BF470Trans GP BJT PNP 250V 0.05A 3-Pin TO-126New Jersey Semiconductor
315536BF470PNP high-voltage transistorsPhilips
315537BF470PNP SILICON PLANAR TRANSISTORSSiemens
315538BF470Silicon PNP triple diffused high-voltage transistorTOSHIBA
315539BF470Tranzystor wielkiej częstotliwościUltra CEMI


315540BF471 2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472Continental Device India Limited
315541BF471Silicon NPN Epitaxial-Planar High Voltage TransistorIPRS Baneasa
315542BF471Trans GP BJT NPN 300V 0.05A 3-Pin TO-126New Jersey Semiconductor
315543BF471NPN high-voltage transistorsPhilips
315544BF471NPN SILICON PLANAR TRANSISTORSSiemens
315545BF471Silicon NPN triple diffused transistorTOSHIBA
315546BF472Leaded Power Transistor General PurposeCentral Semiconductor
315547BF472 2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471Continental Device India Limited
315548BF472Silicon PNP Planar-Epitaxial High Voltage TransistorIPRS Baneasa
315549BF472PNP high-voltage transistorsPhilips
315550BF472PNP SILICON PLANAR TRANSISTORSSiemens
315551BF472Silicon PNP triple diffused high-voltage transistorTOSHIBA
315552BF479Silicon PNP Epitaxial Planar TransistorIPRS Baneasa
315553BF479Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHzSGS-ATES
315554BF479Transistor for TV TUNERS - amplifiers-mixer/oscillatorsSGS-ATES
315555BF479SEpitaxial planar PNP transistor, intended for high current UHF-VHF stages of TV tunersSGS-ATES
315556BF479STransistor for TV TUNERS - amplifiers-mixer/oscillatorsSGS-ATES
315557BF480High frequency transistormble
315558BF480High frequency transistormble
315559BF480NPN silicon transistor, RF amplificationSESCOSEM
315560BF483NPN high-voltage transistorsPhilips


Datasheets found :: 1726161
Page: << | 7884 | 7885 | 7886 | 7887 | 7888 | 7889 | 7890 | 7891 | 7892 | 7893 | 7894 | >>


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