| 314801 | BF1009S | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 314802 | BF1009S | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 314803 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens |
| 314804 | BF1009SR | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 314805 | BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens |
| 314806 | BF1012S | Silicon N-Channel MOSFET Tetrode | Infineon |
| 314807 | BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 314808 | BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 314809 | BF109 | Silicon NPN RF transistor | VALVO |
| 314810 | BF1100 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314811 | BF1100 | Dual-gate MOS-FETs | Philips |
| 314812 | BF1100R | Dual-gate MOS-FETs | Philips |
| 314813 | BF1100WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314814 | BF1100WR | Dual-gate MOS-FET | Philips |
| 314815 | BF1101 | N-channel dual-gate MOS-FETs | Philips |
| 314816 | BF1101R | N-channel dual-gate MOS-FETs | Philips |
| 314817 | BF1101WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314818 | BF1101WR | N-channel dual-gate MOS-FETs | Philips |
| 314819 | BF1102 | N-channel dual-gate MOSFET | NXP Semiconductors |
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| 314820 | BF1102 | Dual N-channel dual gate MOS-FETs | Philips |
| 314821 | BF1102R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314822 | BF1102R | Dual N-channel dual gate MOS-FETs | Philips |
| 314823 | BF1105 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314824 | BF1105 | N-channel dual-gate MOS-FETs | Philips |
| 314825 | BF1105R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314826 | BF1105R | N-channel dual-gate MOS-FETs | Philips |
| 314827 | BF1105WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314828 | BF1105WR | N-channel dual-gate MOS-FETs | Philips |
| 314829 | BF1107 | MOSFET N-channel switching transistor | NXP Semiconductors |
| 314830 | BF1107 | N-channel single gate MOS-FETs | Philips |
| 314831 | BF1107W | N-channel single gate MOS-FETs | Philips |
| 314832 | BF1108 | Silicon RF switches | NXP Semiconductors |
| 314833 | BF1108 | Silicon RF switches | Philips |
| 314834 | BF1108R | Silicon RF switches | NXP Semiconductors |
| 314835 | BF1108R | Silicon RF switches | Philips |
| 314836 | BF1109 | N-channel dual-gate MOS-FETs | Philips |
| 314837 | BF1109R | N-channel dual-gate MOS-FETs | Philips |
| 314838 | BF1109WR | N-channel dual-gate MOS-FETs | Philips |
| 314839 | BF1118 | Silicon RF switches | NXP Semiconductors |
| 314840 | BF1118R | Silicon RF switches | NXP Semiconductors |
