| 303641 | BCR08AS | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 303642 | BCR08AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 303643 | BCR08AS-8 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 303644 | BCR08AS-8 | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 303645 | BCR08PN | Digital Transistors - SOT363 package | Infineon |
| 303646 | BCR08PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
| 303647 | BCR10 | NPN/PNP Silicon Digital Transistor Array | Infineon |
| 303648 | BCR10 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens |
| 303649 | BCR101 | NPN Silicon Digital Transistor | Infineon |
| 303650 | BCR101F | NPN Silicon Digital Transistor | Infineon |
| 303651 | BCR101FE6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
| 303652 | BCR101L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 303653 | BCR101L3E6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
| 303654 | BCR101T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 303655 | BCR101TE6327 | Digital Transistors - R1=100kOhm; R2=100kOhm | Infineon |
| 303656 | BCR103 | NPN Silicon Digital Transistor | Infineon |
| 303657 | BCR103F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 303658 | BCR103FE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
| 303659 | BCR103L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
|
| 303660 | BCR103L3E6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
| 303661 | BCR103T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 303662 | BCR103TE6327 | Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm | Infineon |
| 303663 | BCR103U | NPN Silicon Digital Transistor | Infineon |
| 303664 | BCR108 | Single digital (complex) AF-Transistors in SOT23 package | Infineon |
| 303665 | BCR108 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit | Siemens |
| 303666 | BCR108E6327 | Digital Transistors - R1=2.2 kOhm; R2=47kOhm | Infineon |
| 303667 | BCR108F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 303668 | BCR108FE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm | Infineon |
| 303669 | BCR108L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 303670 | BCR108L3E6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm | Infineon |
| 303671 | BCR108S | NPN Silicon Digital Transistor | Infineon |
| 303672 | BCR108S | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 303673 | BCR108S E6327 | Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V | Infineon |
| 303674 | BCR108SE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 | Infineon |
| 303675 | BCR108T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 303676 | BCR108TE6327 | Digital Transistors - R1= 2,2kOhm; R2= 47kOhm | Infineon |
| 303677 | BCR108W | Single digital (complex) AF-Transistors in SOT323 package | Infineon |
| 303678 | BCR108W | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 303679 | BCR108WE6327 | Digital Transistors - R1=2.2 kOhm; R2=47 kOhm | Infineon |
| 303680 | BCR10CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
