| 303361 | BF995 | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 303362 | BF995A | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303363 | BF995B | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303364 | BF996S | N-channel dual-gate MOSFET | NXP Semiconductors |
| 303365 | BF996S | N-channel dual-gate MOS-FET | Philips |
| 303366 | BF996S | Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) | Siemens |
| 303367 | BF996S | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 303368 | BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303369 | BF996SB | N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303370 | BF997 | N-channel dual-gate MOS-FET | Philips |
| 303371 | BF997 | Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) | Siemens |
| 303372 | BF998 | RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB | Infineon |
| 303373 | BF998 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 303374 | BF998 | Silicon N-channel dual-gate MOS-FETs | Philips |
| 303375 | BF998 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 303376 | BF998 | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 303377 | BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303378 | BF998B | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303379 | BF998R | RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB | Infineon |
|
| 303380 | BF998R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 303381 | BF998R | Silicon N-channel dual-gate MOS-FETs | Philips |
| 303382 | BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Siemens |
| 303383 | BF998R | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 303384 | BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303385 | BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303386 | BF998RB | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303387 | BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 303388 | BF998RW | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 303389 | BF998W | Silicon N-Channel MOSFET Tetrode | Infineon |
| 303390 | BF998W | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Siemens |
| 303391 | BF998WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 303392 | BF998WR | N-channel dual-gate MOS-FET | Philips |
| 303393 | BF999 | Silicon N-Channel MOSFET Triode | Infineon |
| 303394 | BF999 | RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB | Infineon |
| 303395 | BF999 | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) | Siemens |
| 303396 | BFAP15 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 303397 | BFAP57 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 303398 | BFAP58 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 303399 | BFAP59 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 303400 | BFAP80 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
