| 302601 | BF-U415RD | Bright red, anode/cathode, overflow single digit LED display | Yellow Stone Corp |
| 302602 | BF-U415RE | Bright red, anode/cathode, overflow single digit LED display | Yellow Stone Corp |
| 302603 | BF-U416RD | Super red, anode/cathode, overflow single digit LED display | Yellow Stone Corp |
| 302604 | BF-U811 | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302605 | BF-U811RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302606 | BF-U812RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302607 | BF-U812RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302608 | BF-U813RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302609 | BF-U814RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302610 | BF-U815RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302611 | BF-U815RE | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302612 | BF-U816RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302613 | BF-U81DRD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 302614 | BF1005 | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
| 302615 | BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 302616 | BF1005R | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB | Infineon |
| 302617 | BF1005S | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB | Infineon |
| 302618 | BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 302619 | BF1005SR | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
|
| 302620 | BF1005SW | Silicon N-Channel MOSFET Tetrode | Infineon |
| 302621 | BF1005W | Silicon N-Channel MOSFET Tetrode | Infineon |
| 302622 | BF1009 | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 302623 | BF1009 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network | Siemens |
| 302624 | BF1009S | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 302625 | BF1009S | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 302626 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens |
| 302627 | BF1009SR | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 302628 | BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens |
| 302629 | BF1012S | Silicon N-Channel MOSFET Tetrode | Infineon |
| 302630 | BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 302631 | BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 302632 | BF1100 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 302633 | BF1100 | Dual-gate MOS-FETs | Philips |
| 302634 | BF1100R | Dual-gate MOS-FETs | Philips |
| 302635 | BF1100WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 302636 | BF1100WR | Dual-gate MOS-FET | Philips |
| 302637 | BF1101 | N-channel dual-gate MOS-FETs | Philips |
| 302638 | BF1101R | N-channel dual-gate MOS-FETs | Philips |
| 302639 | BF1101WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 302640 | BF1101WR | N-channel dual-gate MOS-FETs | Philips |
