286841 | BF495C | 0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 65 - 135 hFE | Continental Device India Limited |
286842 | BF495D | 0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE | Continental Device India Limited |
286843 | BF496 | Trans GP BJT PNP 350V 0.5A 3-Pin TO-92 Bulk | New Jersey Semiconductor |
286844 | BF502 | NPN SILICON RF TRANSISTOR | Siemens |
286845 | BF503 | NPN SILICON RF TRANSISTOR | Siemens |
286846 | BF505 | NPN SILICON RF TRANSISTOR | Siemens |
286847 | BF506 | PNP Silicon RF Transistor | Infineon |
286848 | BF506 | Trans GP BJT NPN 35V 30A | New Jersey Semiconductor |
286849 | BF506 | PNP Silicon RF Transistor (For VHF mixer and oscillator stages) | Siemens |
286850 | BF507 | NPN SILICON RF TRANSISTOR | Siemens |
286851 | BF510 | N-channel silicon FET | NXP Semiconductors |
286852 | BF510 | N-channel silicon field-effect transistors | Philips |
286853 | BF511 | N-channel silicon FET | NXP Semiconductors |
286854 | BF511 | N-channel silicon field-effect transistors | Philips |
286855 | BF512 | N-channel silicon FET | NXP Semiconductors |
286856 | BF512 | N-channel silicon field-effect transistors | Philips |
286857 | BF513 | N-channel silicon FET | NXP Semiconductors |
286858 | BF513 | N-channel silicon field-effect transistors | Philips |
286859 | BF517 | RF-Bipolar - For amplifier and oscillator applications in TV-tuners | Infineon |
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286860 | BF517 | NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) | Siemens |
286861 | BF519 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
286862 | BF520 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
286863 | BF521 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
286864 | BF543 | RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB | Infineon |
286865 | BF543 | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) | Siemens |
286866 | BF545A | N-channel FET | NXP Semiconductors |
286867 | BF545A | N-channel silicon junction field-effect transistors | Philips |
286868 | BF545B | N-channel FET | NXP Semiconductors |
286869 | BF545B | N-channel silicon junction field-effect transistors | Philips |
286870 | BF545C | N-channel FET | NXP Semiconductors |
286871 | BF545C | N-channel silicon junction field-effect transistors | Philips |
286872 | BF547 | NPN 1 GHz wideband transistor | Philips |
286873 | BF547W | NPN 1 GHz wideband transistor | Philips |
286874 | BF550 | PNP medium frequency transistor | Nexperia |
286875 | BF550 | PNP medium frequency transistor | NXP Semiconductors |
286876 | BF550 | PNP medium frequency transistor | Philips |
286877 | BF550 | PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) | Siemens |
286878 | BF554 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Elektronische |
286879 | BF554 | NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) | Siemens |
286880 | BF556A | N-channel FET | NXP Semiconductors |