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Datasheets found :: 1675338
Page: << | 7163 | 7164 | 7165 | 7166 | 7167 | 7168 | 7169 | 7170 | 7171 | 7172 | 7173 | >>
No.Part NameDescriptionManufacturer
286681BF391Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 BulkNew Jersey Semiconductor
286682BF392 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFEContinental Device India Limited
286683BF392NPN SILICON PLANAR TRANSISTORSMicro Electronics
286684BF392High Voltage Transistors(NPN)Motorola
286685BF392Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 BulkNew Jersey Semiconductor
286686BF393 0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE.Continental Device India Limited
286687BF393NPN SILICON PLANAR TRANSISTORSMicro Electronics
286688BF393High Voltage Transistors(NPN)Motorola
286689BF393High Voltage Transistor(NPN)Motorola
286690BF393Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 BulkNew Jersey Semiconductor
286691BF393Transistor Silicon Plastic NPNON Semiconductor
286692BF393-DHigh Voltage Transistor NPN SiliconON Semiconductor
286693BF393ZL1Transistor Silicon Plastic NPNON Semiconductor
286694BF397PNP SILICON TRANSISTORMicro Electronics
286695BF398PNP SILICON TRANSISTORMicro Electronics
286696BF39931SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMPetc
286697BF39933SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMPetc
286698BF40931SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMPetc
286699BF410LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONSSiemens


286700BF410AN-channel silicon field-effect transistorsPhilips
286701BF410ALOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONSSiemens
286702BF410BN-channel silicon field-effect transistorsPhilips
286703BF410BLOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONSSiemens
286704BF410CN-channel silicon field-effect transistorsPhilips
286705BF410CLOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONSSiemens
286706BF410DN-channel silicon field-effect transistorsPhilips
286707BF410DLOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONSSiemens
286708BF414NPN Silicon RF TransistorInfineon
286709BF414NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)Siemens
286710BF414Tranzystor wielkiej częstotliwościUltra CEMI
286711BF415Trans GP BJT NPN 250V 0.1A 3-Pin TO-126New Jersey Semiconductor
286712BF416Trans GP BJT NPN 250V 0.1A 3-Pin TO-126New Jersey Semiconductor
286713BF419NPN high-voltage transistorPhilips
286714BF41931SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMPetc
286715BF420 0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE.Continental Device India Limited
286716BF420Small Signal Transistors (NPN)General Semiconductor
286717BF420NPN Silicon Transistor with high Reve...Infineon
286718BF420High Voltage TransistorKorea Electronics (KEC)
286719BF420TO-92 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
286720BF420SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics


Datasheets found :: 1675338
Page: << | 7163 | 7164 | 7165 | 7166 | 7167 | 7168 | 7169 | 7170 | 7171 | 7172 | 7173 | >>


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