| 286401 | BF-U416RD | Super red, anode/cathode, overflow single digit LED display | Yellow Stone Corp |
| 286402 | BF-U811 | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286403 | BF-U811RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286404 | BF-U812RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286405 | BF-U812RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286406 | BF-U813RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286407 | BF-U814RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286408 | BF-U815RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286409 | BF-U815RE | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286410 | BF-U816RD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286411 | BF-U81DRD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 286412 | BF1005 | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
| 286413 | BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 286414 | BF1005R | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB | Infineon |
| 286415 | BF1005S | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB | Infineon |
| 286416 | BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 286417 | BF1005SR | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
| 286418 | BF1005SW | Silicon N-Channel MOSFET Tetrode | Infineon |
| 286419 | BF1005W | Silicon N-Channel MOSFET Tetrode | Infineon |
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| 286420 | BF1009 | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 286421 | BF1009 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network | Siemens |
| 286422 | BF1009S | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 286423 | BF1009S | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 286424 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens |
| 286425 | BF1009SR | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 286426 | BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens |
| 286427 | BF1012S | Silicon N-Channel MOSFET Tetrode | Infineon |
| 286428 | BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 286429 | BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 286430 | BF1100 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 286431 | BF1100 | Dual-gate MOS-FETs | Philips |
| 286432 | BF1100R | Dual-gate MOS-FETs | Philips |
| 286433 | BF1100WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 286434 | BF1100WR | Dual-gate MOS-FET | Philips |
| 286435 | BF1101 | N-channel dual-gate MOS-FETs | Philips |
| 286436 | BF1101R | N-channel dual-gate MOS-FETs | Philips |
| 286437 | BF1101WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 286438 | BF1101WR | N-channel dual-gate MOS-FETs | Philips |
| 286439 | BF1102 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 286440 | BF1102 | Dual N-channel dual gate MOS-FETs | Philips |
