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Datasheets found :: 1675338
Page: << | 6931 | 6932 | 6933 | 6934 | 6935 | 6936 | 6937 | 6938 | 6939 | 6940 | 6941 | >>
No.Part NameDescriptionManufacturer
277401BCR571Digital Transistors - PNP Silicon Digital TransistorInfineon
277402BCR571PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277403BCR573Digital Transistors - PNP Silicon Digital TransistorInfineon
277404BCR573PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277405BCR583Digital Transistors - PNP Silicon Digital TransistorInfineon
277406BCR583PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277407BCR5AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277408BCR5AMTriac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277409BCR5AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277410BCR5AM-12Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277411BCR5AM-12LTriac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277412BCR5AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277413BCR5AM-8Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277414BCR5AM-8LTriac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277415BCR5ASMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277416BCR5ASSurface Mount Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277417BCR5AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277418BCR5AS-12Surface Mount Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277419BCR5AS-12LSurface Mount Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors


277420BCR5AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277421BCR5AS-8LSurface Mount Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277422BCR5KMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277423BCR5KMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277424BCR5PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277425BCR5PMIsolated Triac 5 Amperes/400-600 VoltsPowerex Power Semiconductors
277426BCR5PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277427BCR5PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277428BCR5PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277429BCR6MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277430BCR6Triac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277431BCR6AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277432BCR6AMTriac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277433BCR6AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277434BCR6AM-12Triac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277435BCR6AM-12LTriac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277436BCR6AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277437BCR6AM-8Triac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277438BCR6AM-8LTriac 6 Amperes/400-600 VoltsPowerex Power Semiconductors
277439BCR8MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277440BCR8CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation


Datasheets found :: 1675338
Page: << | 6931 | 6932 | 6933 | 6934 | 6935 | 6936 | 6937 | 6938 | 6939 | 6940 | 6941 | >>


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