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Datasheets found :: 1675338
Page: << | 6928 | 6929 | 6930 | 6931 | 6932 | 6933 | 6934 | 6935 | 6936 | 6937 | 6938 | >>
No.Part NameDescriptionManufacturer
277281BCR198L3E6327Digital Transistors - R1= 47 kOhm ; R2= 47 kOhmInfineon
277282BCR198SDigital Transistors - SOT363 packageInfineon
277283BCR198SPNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277284BCR198TDigital Transistors - R1=47 kOhm R2=47 kOhmInfineon
277285BCR198WDigital Transistors - R1= 47 kOhm ; R2= 47 kOhmInfineon
277286BCR198WPNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277287BCR199PNP Silicon Digital TransistorInfineon
277288BCR199FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
277289BCR199FE6327Digital Transistors - R1= 47 kOhm ; R2= - kOhmInfineon
277290BCR199L3PNP Silicon Digital TransistorInfineon
277291BCR199L3E6327Digital Transistors - R1= 47 kOhmInfineon
277292BCR199TSingle digital (complex) AF-Transistors in SC75 packageInfineon
277293BCR199TE6327Digital Transistors - R1= 47 kOhmInfineon
277294BCR19PNDigital Transistors - SOT363 packageInfineon
277295BCR1AMLead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
277296BCR1AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277297BCR1AM-12MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPEMitsubishi Electric Corporation
277298BCR1AM-12Lead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
277299BCR1AM-8MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPEMitsubishi Electric Corporation


277300BCR1AM-8Lead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
277301BCR20AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
277302BCR20AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277303BCR20AMTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
277304BCR20AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277305BCR20AM-12Triac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
277306BCR20AM-12LTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
277307BCR20AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277308BCR20AM-8Triac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
277309BCR20AM-8LTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
277310BCR20BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
277311BCR20B-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277312BCR20B-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277313BCR20CMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
277314BCR20C-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277315BCR20C-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277316BCR20EMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
277317BCR20KMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277318BCR22NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)Siemens
277319BCR22PNDual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50VInfineon
277320BCR22PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens


Datasheets found :: 1675338
Page: << | 6928 | 6929 | 6930 | 6931 | 6932 | 6933 | 6934 | 6935 | 6936 | 6937 | 6938 | >>


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