| 272721 | BC237CBU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272722 | BC237CTA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272723 | BC237TF | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272724 | BC237TFR | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272725 | BC238 | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE | Continental Device India Limited |
| 272726 | BC238 | Switching and Amplifier Applications | Fairchild Semiconductor |
| 272727 | BC238 | General Purpose Transistor | Korea Electronics (KEC) |
| 272728 | BC238 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 272729 | BC238 | Tranzystor małej częstotliwości małej mocy | Ultra CEMI |
| 272730 | BC238 | Tranzystor krzemowy małej mocy, małej częstotliwości | Ultra CEMI |
| 272731 | BC238 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. | USHA India LTD |
| 272732 | BC238A | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFE | Continental Device India Limited |
| 272733 | BC238A | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272734 | BC238ABU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272735 | BC238ATA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272736 | BC238ATF | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272737 | BC238ATFR | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272738 | BC238B | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFE | Continental Device India Limited |
| 272739 | BC238B | Amplifier Transistors | Motorola |
|
| 272740 | BC238BBU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272741 | BC238BTA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272742 | BC238BU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272743 | BC238C | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380 - 800 hFE | Continental Device India Limited |
| 272744 | BC238C | Amplifier Transistors | Motorola |
| 272745 | BC238C | Amplifier Transistor NPN | ON Semiconductor |
| 272746 | BC238CBU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272747 | BC238CTA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272748 | BC238TAR | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272749 | BC238TF | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272750 | BC238TFR | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272751 | BC239 | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE | Continental Device India Limited |
| 272752 | BC239 | Switching and Amplifier Applications | Fairchild Semiconductor |
| 272753 | BC239 | General Purpose Transistor | Korea Electronics (KEC) |
| 272754 | BC239 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 272755 | BC239 | Amplifier Transistors | Motorola |
| 272756 | BC239 | Tranzystor małej częstotliwości małej mocy | Ultra CEMI |
| 272757 | BC239 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. | USHA India LTD |
| 272758 | BC239ABU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272759 | BC239ATA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 272760 | BC239B | 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFE | Continental Device India Limited |
