|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:  1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 G45A


Datasheets found :: 1726161
Page: << | 5640 | 5641 | 5642 | 5643 | 5644 | 5645 | 5646 | 5647 | 5648 | 5649 | 5650 | >>
No.Part NameDescriptionManufacturer
225761AEY30Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german languageSiemens
225762AEY30AGermanium Tunnel DiodeSiemens
225763AEY30AGermanium Tunnel DiodeSiemens
225764AEY30AGermanium tunnel diodeSiemens
225765AEY30ATunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german languageSiemens
225766AEY30BGermanium Tunnel DiodeSiemens
225767AEY30BGermanium Tunnel DiodeSiemens
225768AEY30BGermanium tunnel diodeSiemens
225769AEY30BTunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german languageSiemens
225770AEY30CGermanium Tunnel DiodeSiemens
225771AEY30CGermanium Tunnel DiodeSiemens
225772AEY30CGermanium tunnel diodeSiemens
225773AEY30CTunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german languageSiemens
225774AEY30DGermanium Tunnel DiodeSiemens
225775AEY30DGermanium Tunnel DiodeSiemens
225776AEY30DGermanium tunnel diodeSiemens
225777AEY30DTunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german languageSiemens
225778AEY31Detector diodemble
225779AEY31Subminiature germanium bonded backward diodes for use up to J bandMullard


225780AEY31ADetector diodemble
225781AEY31ASubminiature germanium bonded backward diodes for use up to J bandMullard
225782AF002C1-32GaAs MMIC Control FET in SOT 143 DC-2.5 GHzAlpha Industries Inc
225783AF002C1-39GaAs IC Control FET Series DC-2.5 GHzAlpha Industries Inc
225784AF002C1-39GaAs IC Control FET Series DC-2.5 GHzSkyworks Solutions
225785AF002C4-32GaAs control FETAlpha Industries Inc
225786AF002C4-39GaAs IC Control FET Series DC-2.5 GHzAlpha Industries Inc
225787AF002C4-39GaAs IC Control FET Series DC-2.5 GHzSkyworks Solutions
225788AF002N2-32GaAs IC 15 dB Voltage Variable Attenuator Single Control DC–2 GHzAlpha Industries Inc
225789AF002N2-32GaAs IC 15 dB Voltage Variable Attenuator Single Control DC-2 GHzSkyworks Solutions
225790AF100-1CG+/-18 V, 900 mW, universal active filterNational Semiconductor
225791AF100-1CJ+/-18 V, 900 mW, universal active filterNational Semiconductor
225792AF100-1CN+/-18 V, 900 mW, universal active filterNational Semiconductor
225793AF100-1G+/-18 V, 900 mW, universal active filterNational Semiconductor
225794AF100-2CG+/-18 V, 900 mW, universal active filterNational Semiconductor
225795AF100-2CJ+/-18 V, 900 mW, universal active filterNational Semiconductor
225796AF100-2CN+/-18 V, 900 mW, universal active filterNational Semiconductor
225797AF100-2G+/-18 V, 900 mW, universal active filterNational Semiconductor
225798AF101Germanium PNP junction transistor, before and mixer stage 2MHz, IF amplifier 470kHzTELEFUNKEN
225799AF102Diffusion-alloyed germanium PNP RF transistorVALVO
225800AF105Germanium PNP junction transistor, IF amplifierTELEFUNKEN


Datasheets found :: 1726161
Page: << | 5640 | 5641 | 5642 | 5643 | 5644 | 5645 | 5646 | 5647 | 5648 | 5649 | 5650 | >>


© 2024    www.datasheetcatalog.com