| 1538681 | T224162-50S | 256K x 16 DRAM EDO page mode, 50ns | TM Technology |
| 1538682 | T224162B | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538683 | T224162B | 4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode | TM Technology |
| 1538684 | T224162B-22 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538685 | T224162B-25 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538686 | T224162B-28 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538687 | T224162B-35 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538688 | T224162B-45 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538689 | T224162B-50 | 256K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538690 | T22N05 | 22 AMPS 50V THYRISTORS | IPRS Baneasa |
| 1538691 | T22N1 | 22 AMPS 100V THYRISTORS | IPRS Baneasa |
| 1538692 | T22N2 | 22 AMPS 200V THYRISTORS | IPRS Baneasa |
| 1538693 | T22N3 | 22 AMPS 300V THYRISTORS | IPRS Baneasa |
| 1538694 | T22N4 | 22 AMPS 400V THYRISTORS | IPRS Baneasa |
| 1538695 | T22N5 | 22 AMPS 500V THYRISTORS | IPRS Baneasa |
| 1538696 | T22N6 | 22 AMPS 600V THYRISTORS | IPRS Baneasa |
| 1538697 | T22N7 | 22 AMPS 700V THYRISTORS | IPRS Baneasa |
| 1538698 | T22N8 | 22 AMPS 800V THYRISTORS | IPRS Baneasa |
| 1538699 | T22R1 | 22 AMPS 100V FAST THYRISTORS | IPRS Baneasa |
|
| 1538700 | T22R2 | 22 AMPS 200V FAST THYRISTORS | IPRS Baneasa |
| 1538701 | T22R3 | 22 AMPS 300V FAST THYRISTORS | IPRS Baneasa |
| 1538702 | T22R4 | 22 AMPS 400V FAST THYRISTORS | IPRS Baneasa |
| 1538703 | T22R5 | 22 AMPS 500V FAST THYRISTORS | IPRS Baneasa |
| 1538704 | T22R6 | 22 AMPS 600V FAST THYRISTORS | IPRS Baneasa |
| 1538705 | T22R7 | 22 AMPS 700V FAST THYRISTORS | IPRS Baneasa |
| 1538706 | T22R8 | 22 AMPS 800V FAST THYRISTORS | IPRS Baneasa |
| 1538707 | T2300 | SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538708 | T2300A | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. | General Electric Solid State |
| 1538709 | T2300B | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. | General Electric Solid State |
| 1538710 | T2300D | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. | General Electric Solid State |
| 1538711 | T2300F | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. | General Electric Solid State |
| 1538712 | T2300M | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. | General Electric Solid State |
| 1538713 | T2300N | 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. | General Electric Solid State |
| 1538714 | T2301 | SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538715 | T2301A | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. | General Electric Solid State |
| 1538716 | T2301B | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. | General Electric Solid State |
| 1538717 | T2301D | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. | General Electric Solid State |
| 1538718 | T2301F | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. | General Electric Solid State |
| 1538719 | T2301M | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V. | General Electric Solid State |
| 1538720 | T2301N | PHASE CONTROL THYRISTORS | etc |
