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Datasheets found :: 1726161
Page: << | 38324 | 38325 | 38326 | 38327 | 38328 | 38329 | 38330 | 38331 | 38332 | 38333 | 38334 | >>
No.Part NameDescriptionManufacturer
1533121STTS751-0WB3F2.25 V low-voltage local digital temperature sensorST Microelectronics
1533122STTS751-1DP3F2.25 V low-voltage local digital temperature sensorST Microelectronics
1533123STTS751-1WB3F2.25 V low-voltage local digital temperature sensorST Microelectronics
1533124STTS75DS2FDigital temperature sensor and thermal watchdogST Microelectronics
1533125STTS75M2FDigital temperature sensor and thermal watchdogST Microelectronics
1533126STU10N60M2N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK packageST Microelectronics
1533127STU10NA50N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1533128STU10NA50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533129STU10NB80N - CHANNEL 800V - 0.65Ohms - 10A - Max220 PowerMESH MOSFETSGS Thomson Microelectronics
1533130STU10NB80OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533131STU10NC70ZOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533132STU10NC70ZIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533133STU10NM60NN-channel 600 V, 0.53 Ohm, 10 A, IPAK MDmesh(TM) II Power MOSFETST Microelectronics
1533134STU10P6F6P-channel 60 V, 0.13 Ohm typ., 10 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in IPAK packageST Microelectronics
1533135STU11N65M2N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK packageST Microelectronics
1533136STU11NB60N-CHANNEL 600V - 0.5Ohm - 11A - Max220 PowerMESH MOSFETSGS Thomson Microelectronics
1533137STU11NB60OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533138STU11NC60N-CHANNEL 600V - 0.48Ohm - 11A Max220 PowerMesh II MOSFETSGS Thomson Microelectronics
1533139STU11NC60OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics


1533140STU1224NN-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics Corp.
1533141STU12N65M5NN-channel 650 V, 0.39 Ohm, 8.5 A MDmesh(TM) V Power MOSFET IPAKST Microelectronics
1533142STU13005NHigh voltage fast-switching NPN power transistorST Microelectronics
1533143STU13N60M2N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK packageST Microelectronics
1533144STU13NB60N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFETSGS Thomson Microelectronics
1533145STU13NB60OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533146STU13NC50N-CHANNEL 500V 0.31 OHM 13A MAX220 POWERMESH II MOSFETSGS Thomson Microelectronics
1533147STU13NC50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533148STU13NM60NN-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK packageST Microelectronics
1533149STU14NA50N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1533150STU14NA50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1533151STU14NA50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533152STU16N65M2N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK packageST Microelectronics
1533153STU16NB50N-CHANNEL 500V - 0.28W - 15.6A-Max220 PowerMESH MOSFETSGS Thomson Microelectronics
1533154STU16NB50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533155STU16NC50N-CHANNEL 500V 0.22 OHM 16A MAX220 POWERMESH II MOSFETSGS Thomson Microelectronics
1533156STU16NC50OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1533157STU1HN60K3N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK packageST Microelectronics
1533158STU20714B3T U INTERFACE CIRCUITSGS Thomson Microelectronics
1533159STU2071B14B3T U INTERFACE CIRCUITSGS Thomson Microelectronics
1533160STU2071FN4B3T U INTERFACE CIRCUITSGS Thomson Microelectronics


Datasheets found :: 1726161
Page: << | 38324 | 38325 | 38326 | 38327 | 38328 | 38329 | 38330 | 38331 | 38332 | 38333 | 38334 | >>


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