| 1519361 | STD131 ASIC | Equivalent standard load for layers | Samsung Electronic |
| 1519362 | STD131 ASIC | STD130 Brochure | Samsung Electronic |
| 1519363 | STD131 ASIC | Glossary of analog terms | Samsung Electronic |
| 1519364 | STD131 ASIC | High Density Memories | Samsung Electronic |
| 1519365 | STD131 ASIC | Book Contents | Samsung Electronic |
| 1519366 | STD131 ASIC | I/O IP Cells | Samsung Electronic |
| 1519367 | STD131 ASIC | Primitive Overview | Samsung Electronic |
| 1519368 | STD131 ASIC | Primitive Logic Cells | Samsung Electronic |
| 1519369 | STD13N60M2 | N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package | ST Microelectronics |
| 1519370 | STD13NM60N | N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package | ST Microelectronics |
| 1519371 | STD13NM60ND | N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package | ST Microelectronics |
| 1519372 | STD150 ASIC | Input / Output Cell | Samsung Electronic |
| 1519373 | STD150 ASIC | I/O Cells | Samsung Electronic |
| 1519374 | STD150 ASIC | Primitive Miscellanies | Samsung Electronic |
| 1519375 | STD150 ASIC | Primitive Latches | Samsung Electronic |
| 1519376 | STD150 ASIC | STD150 Brochure Rev. 1.0 | Samsung Electronic |
| 1519377 | STD150 ASIC | Introduction(Jan. 22, 2002) | Samsung Electronic |
| 1519378 | STD150 ASIC | Primitive Overview | Samsung Electronic |
| 1519379 | STD150 ASIC | I/O IP Cells | Samsung Electronic |
|
| 1519380 | STD150 ASIC | Timmings | Samsung Electronic |
| 1519381 | STD150 ASIC | High Density Memories | Samsung Electronic |
| 1519382 | STD150 ASIC | Characteristics(Jan. 22, 2002) | Samsung Electronic |
| 1519383 | STD150 ASIC | Package Capabilities | Samsung Electronic |
| 1519384 | STD150 ASIC | Glossary of analog terms | Samsung Electronic |
| 1519385 | STD150 ASIC | PLL2108X (Jan. 17, 2002) | Samsung Electronic |
| 1519386 | STD150 ASIC | Primitive Flip/Flops | Samsung Electronic |
| 1519387 | STD150 ASIC | Primitive Logic Cells | Samsung Electronic |
| 1519388 | STD150 ASIC | Maximum Fanouts | Samsung Electronic |
| 1519389 | STD150N3LLH6 | N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET | ST Microelectronics |
| 1519390 | STD150NH02L | N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION | SGS Thomson Microelectronics |
| 1519391 | STD150NH02L | N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION | ST Microelectronics |
| 1519392 | STD150NH02L-1 | N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET | ST Microelectronics |
| 1519393 | STD150NH02LT4 | N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET | ST Microelectronics |
| 1519394 | STD155N3H6 | N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | ST Microelectronics |
| 1519395 | STD155N3LH6 | N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package | ST Microelectronics |
| 1519396 | STD15N06 | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | SGS Thomson Microelectronics |
| 1519397 | STD15N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1519398 | STD15N06 | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | ST Microelectronics |
| 1519399 | STD15N06L | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | SGS Thomson Microelectronics |
| 1519400 | STD15N06L | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS Thomson Microelectronics |
