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Datasheets found :: 1675338
Page: << | 37274 | 37275 | 37276 | 37277 | 37278 | 37279 | 37280 | 37281 | 37282 | 37283 | 37284 | >>
No.Part NameDescriptionManufacturer
1491121T224162-25J256K x 16 DRAM EDO page mode, 25nsTM Technology
1491122T224162-25S256K x 16 DRAM EDO page mode, 25nsTM Technology
1491123T224162-28J256K x 16 DRAM EDO page mode, 28nsTM Technology
1491124T224162-28S256K x 16 DRAM EDO page mode, 28nsTM Technology
1491125T224162-35J256K x 16 DRAM EDO page mode, 35nsTM Technology
1491126T224162-35S256K x 16 DRAM EDO page mode, 35nsTM Technology
1491127T224162-45J256K x 16 DRAM EDO page mode, 45nsTM Technology
1491128T224162-45S256K x 16 DRAM EDO page mode, 45nsTM Technology
1491129T224162-50J256K x 16 DRAM EDO page mode, 50nsTM Technology
1491130T224162-50S256K x 16 DRAM EDO page mode, 50nsTM Technology
1491131T224162B256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491132T224162B4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page modeTM Technology
1491133T224162B-22256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491134T224162B-25256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491135T224162B-28256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491136T224162B-35256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491137T224162B-45256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491138T224162B-50256K x 16 DYNAMIC RAM EDO PAGE MODETaiwan Memory Technology
1491139T2300SENSITIVE GATE SILICON TRIACSGeneral Electric Solid State


1491140T2300A2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V.General Electric Solid State
1491141T2300B2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V.General Electric Solid State
1491142T2300D2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V.General Electric Solid State
1491143T2300F2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V.General Electric Solid State
1491144T2300M2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V.General Electric Solid State
1491145T2300N2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V.General Electric Solid State
1491146T2301SENSITIVE GATE SILICON TRIACSGeneral Electric Solid State
1491147T2301A2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V.General Electric Solid State
1491148T2301B2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V.General Electric Solid State
1491149T2301D2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V.General Electric Solid State
1491150T2301F2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V.General Electric Solid State
1491151T2301M2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V.General Electric Solid State
1491152T2301NPHASE CONTROL THYRISTORSetc
1491153T2301N2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V.General Electric Solid State
1491154T2302SENSITIVE GATE SILICON TRIACSGeneral Electric Solid State
1491155T2302A2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V.General Electric Solid State
1491156T2302B2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V.General Electric Solid State
1491157T2302D2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V.General Electric Solid State
1491158T2302F2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V.General Electric Solid State
1491159T2302M2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V.General Electric Solid State
1491160T2302N2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V.General Electric Solid State


Datasheets found :: 1675338
Page: << | 37274 | 37275 | 37276 | 37277 | 37278 | 37279 | 37280 | 37281 | 37282 | 37283 | 37284 | >>


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