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Datasheets found :: 1675338
Page: << | 33028 | 33029 | 33030 | 33031 | 33032 | 33033 | 33034 | 33035 | 33036 | 33037 | 33038 | >>
No.Part NameDescriptionManufacturer
1321281Q62702-F1645NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)Siemens
1321282Q62702-F1665Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)Siemens
1321283Q62702-F1681PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)Siemens
1321284Q62702-F1685NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)Siemens
1321285Q62702-F1771Silicon N Channel MOSFET TetrodeSiemens
1321286Q62702-F1772Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)Siemens
1321287Q62702-F1773Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
1321288Q62702-F1774Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
1321289Q62702-F1775Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
1321290Q62702-F1776Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
1321291Q62702-F1794NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)Siemens
1321292Q62702-F182N-Channel junction field-Effect TransistorsSiemens
1321293Q62702-F205N-Channel junction field-Effect TransistorsSiemens
1321294Q62702-F209N-Channel junction field-Effect TransistorsSiemens
1321295Q62702-F219N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORSSiemens
1321296Q62702-F236N-Channel junction field-Effect TransistorsSiemens
1321297Q62702-F250N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORSSiemens
1321298Q62702-F254N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORSSiemens
1321299Q62702-F296NPN SILICON TRANSISTOR FOR RF BROADBAND AMPLIFIERSiemens


1321300Q62702-F311PNP SILICON RF TRANSISTORSiemens
1321301Q62702-F315NPN SILICON RF TRANSISTORSSiemens
1321302Q62702-F316NPN SILICON RF TRANSISTORSSiemens
1321303Q62702-F317NPN SILICON RF TRANSISTORSSiemens
1321304Q62702-F319NPN SILICON RF BROADBAND TRANSISTORSiemens
1321305Q62702-F320NPN SILICON RF BROADBAND TRANSISTORSiemens
1321306Q62702-F321NPN SILICON RF BROADBAND TRANSISTORSSiemens
1321307Q62702-F346-S1NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERSSiemens
1321308Q62702-F347-S1NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONSSiemens
1321309Q62702-F348npn silicon rf transistorSiemens
1321310Q62702-F349npn silicon rf transistorSiemens
1321311Q62702-F35SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability)Siemens
1321312Q62702-F350NPN SILICON RF TRANSISTORSiemens
1321313Q62702-F354NPN Silicon RF TransistorSiemens
1321314Q62702-F365NPN SILICON RF BROADBAND TRANSISTORSiemens
1321315Q62702-F390NPN SILICON RF BROADBAND TRANSISTORSiemens
1321316Q62702-F393N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORSSiemens
1321317Q62702-F395NPN SILICON RF TRANSISTORSSiemens
1321318Q62702-F396NPN SILICON RF TRANSISTORSSiemens
1321319Q62702-F408PNP SILICON PLANAR TRANSISTORSSiemens
1321320Q62702-F414NPN SILICON PLANAR TRANSISTORSSiemens


Datasheets found :: 1675338
Page: << | 33028 | 33029 | 33030 | 33031 | 33032 | 33033 | 33034 | 33035 | 33036 | 33037 | 33038 | >>

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