| 1244801 | NE538 | High Slew Rate Op Amp | Philips |
| 1244802 | NE538D | High Slew Rate Op Amp | Philips |
| 1244803 | NE538FE | High Slew Rate Op Amp | Philips |
| 1244804 | NE538N | High Slew Rate Op Amp | Philips |
| 1244805 | NE5410 | 10-Bit high-speed multiplying D/A converter | Philips |
| 1244806 | NE5410F | 10-Bit high-speed multiplying D/A converter | Philips |
| 1244807 | NE542 | Dual Low-Noise Preamplifier | Ideal Semiconductor |
| 1244808 | NE542 | Dual Low-Noise Preamplifier | Philips |
| 1244809 | NE544 | Servo Amplifier | Ideal Semiconductor |
| 1244810 | NE544 | Servo Amplifier | Philips |
| 1244811 | NE5500179A | SILICON POWER MOS FET | NEC |
| 1244812 | NE5500179A-T1 | SILICON POWER MOS FET | NEC |
| 1244813 | NE5510179A-T1 | 3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. | NEC |
| 1244814 | NE5510279A-T1 | 3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. | NEC |
| 1244815 | NE5511279A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC |
| 1244816 | NE5511279A-T1 | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC |
| 1244817 | NE5511279A-T1A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | NEC |
| 1244818 | NE5512 | Dual high-performance operational amplifier | Philips |
| 1244819 | NE5512D | Dual high-performance operational amplifier | Philips |
|
| 1244820 | NE5512N | Dual high-performance operational amplifier | Philips |
| 1244821 | NE5514 | Quad high-performance operational amplifier | Philips |
| 1244822 | NE5514D | Quad high-performance operational amplifier | Philips |
| 1244823 | NE5514N | Quad high-performance operational amplifier | Philips |
| 1244824 | NE5514NB | Quad high-performance operational amplifier | Philips |
| 1244825 | NE5517 | Dual Operational Transconductance Amplifier | ON Semiconductor |
| 1244826 | NE5517 | Dual operational transconductance amplifier | Philips |
| 1244827 | NE5517A | Dual operational transconductance amplifier | Philips |
| 1244828 | NE5517AN | Dual operational transconductance amplifier | Philips |
| 1244829 | NE5517D | Dual operational transconductance amplifier | Philips |
| 1244830 | NE5517N | Dual operational transconductance amplifier | Philips |
| 1244831 | NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET | NEC |
| 1244832 | NE5520279A-T1 | NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET | NEC |
| 1244833 | NE5520379A-T1A | NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. | NEC |
| 1244834 | NE5521 | LVDT signal conditioner | Philips |
| 1244835 | NE5521D | LVDT signal conditioner | Philips |
| 1244836 | NE5521N | LVDT signal conditioner | Philips |
| 1244837 | NE552R479A-T1A | NEC's 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET. | NEC |
| 1244838 | NE5532 | Dual Operational Amplifier | Fairchild Semiconductor |
| 1244839 | NE5532 | Operational Amplifier, Internally Compensated, Low Noise , Dual | ON Semiconductor |
| 1244840 | NE5532 | Internally-compensated dual low noise operational amplifier | Philips |
