| 113001 | 30KPA96C | Diode TVS Single Bi-Dir 96V 30KW 2-Pin Case P600 T/R | New Jersey Semiconductor |
| 113002 | 30KPA96CA | Diode TVS Single Bi-Dir 96V 30KW 2-Pin Case P600 T/R | New Jersey Semiconductor |
| 113003 | 30KPA96CAe3/TR13 | Standard Unidirectional and Bidirectional TVS | Microsemi |
| 113004 | 30KPA96Ce3/TR13 | Standard Unidirectional and Bidirectional TVS | Microsemi |
| 113005 | 30KPA96e3/TR13 | Standard Unidirectional and Bidirectional TVS | Microsemi |
| 113006 | 30KRC60 | 30KRC60 | Nihon |
| 113007 | 30KT | Heavy Duty High Voltage Capacitors | Vishay |
| 113008 | 30KTD12 | Heavy Duty High Voltage Capacitors | Vishay |
| 113009 | 30KTD18 | Heavy Duty High Voltage Capacitors | Vishay |
| 113010 | 30KTT40 | Heavy Duty High Voltage Capacitors | Vishay |
| 113011 | 30KTT66 | Heavy Duty High Voltage Capacitors | Vishay |
| 113012 | 30KW102 | 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113013 | 30KW102A | 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113014 | 30KW108 | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113015 | 30KW108A | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113016 | 30KW120 | 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113017 | 30KW120A | 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113018 | 30KW132 | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113019 | 30KW132A | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
|
| 113020 | 30KW144 | 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113021 | 30KW144A | 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113022 | 30KW156 | 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113023 | 30KW156A | 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113024 | 30KW168 | 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113025 | 30KW168A | 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113026 | 30KW180 | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113027 | 30KW180A | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113028 | 30KW198 | 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113029 | 30KW198A | 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113030 | 30KW216 | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113031 | 30KW216A | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113032 | 30KW240 | 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113033 | 30KW240A | 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113034 | 30KW258 | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113035 | 30KW258A | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113036 | 30KW270 | 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113037 | 30KW270A | 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113038 | 30KW288 | 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113039 | 30KW288A | 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
| 113040 | 30L30CT | 30V 30A Schottky Common Cathode Diode in a TO-220AB package | International Rectifier |
