|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   G45A


Alliance Semiconductor

Datasheet Catalog - Page 4

Datasheets found :: 2123Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No.Part NameDescription
151AS29LV800T-70RSC3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time
152AS29LV800T-70RSI3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time
153AS29LV800T-70RTC3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time
154AS29LV800T-70RTI3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time
155AS29LV800T-80SC3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time
156AS29LV800T-80SI3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time
157AS29LV800T-80TC3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time
158AS29LV800T-80TI3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time
159AS29LV800T-90SC3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
160AS29LV800T-90SI3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
161AS29LV800T-90TC3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
162AS29LV800T-90TI3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time


163AS29P2005V 256K x 8 / 128K x 16 CMOS Flash EEPROM
164AS4C14400-40JC1M-bit â 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
165AS4C14400-40TC1M-bit Þ 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
166AS4C14400-50JC1M-bit â 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
167AS4C14400-50TC1M-bit ÷ 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
168AS4C14400-60JC1M-bit Á 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
169AS4C14400-60TC1M-bit  4 CMOS DRAM fast page mode, single 5V power supply, 60ns
170AS4C14400-70JC1M-bit à 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
171AS4C14400-70TC1M-bit á 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
172AS4C14405-40JC1M-bit ÷ 4 CMOS DRAM EDO, single 5V power supply, 40ns
173AS4C14405-40TC1M-bit À 4 CMOS DRAM EDO, single 5V power supply, 40ns
174AS4C14405-50JC1M-bit Þ 4 CMOS DRAM EDO, single 5V power supply, 50ns
175AS4C14405-50TC1M-bit þ 4 CMOS DRAM EDO, single 5V power supply, 50ns
176AS4C14405-60JC1M-bit à 4 CMOS DRAM EDO, single 5V power supply, 60ns
177AS4C14405-60TC1M-bit × 4 CMOS DRAM EDO, single 5V power supply, 60ns
178AS4C14405-70JC1M-bit Á 4 CMOS DRAM EDO, single 5V power supply, 70ns
179AS4C14405-70TC1M-bit â 4 CMOS DRAM EDO, single 5V power supply, 70ns
180AS4C1M16E55V 1M x 16 CMOS DRAM (EDO)
181AS4C1M16F55V 1M x 16 CMOS DRAM (fast-page mode)
182AS4C1M16F5-50JC5V 1M X 16 CMOS DRAM
183AS4C1M16F5-50JI5V 1M X 16 CMOS DRAM
184AS4C1M16F5-50TC5V 1M X 16 CMOS DRAM
185AS4C1M16F5-50TI5V 1M X 16 CMOS DRAM
186AS4C1M16F5-60JC5V 1M X 16 CMOS DRAM
187AS4C1M16F5-60JI5V 1M X 16 CMOS DRAM
188AS4C1M16F5-60TC5V 1M X 16 CMOS DRAM
189AS4C1M16F5-60TI5V 1M X 16 CMOS DRAM
190AS4C256K16E05V 256K x CMOS DRAM (EDO)
191AS4C256K16E0-30JC5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
192AS4C256K16E0-35JC5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
193AS4C256K16E0-50JC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
194AS4C256K16E0-50TC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
195AS4C256K16E0-60JCT(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO)
196AS4C256K16F0-25JC5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
197AS4C256K16F0-25JI5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
198AS4C256K16F0-25TC5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
199AS4C256K16F0-25TI5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
200AS4C256K16F0-30JC5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time


Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 12 | 14 | 16 | 18 | 20 | 22 | 24 | 26 | 28 | 30 | 32 | 34 | 36 | 38 | 40 | 42 | 43 |


© 2024    www.datasheetcatalog.com/alliancesemiconductor/1/