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USHA India LTD

Datasheet Catalog - Page 3
Datasheets found :: 426Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No.Part NameDescription
101BC337Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current
102BC338Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA.
103BC549Transistor. Switching and AF ampplifier. Low noise. Vcbo = 30V, Vceo= 30V, Vebo = 5V, Pc = 500mW, Ic = 100mA.
104BC550Transistor. Switching and AF amplifier. Low noise. Vcbo = 50V, Vceo= 45V, Vebo = 5V, Pc = 500mW, Ic = 100mA.
105BC556Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA.
106BC557Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA.
107BC558Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA.
108BC559Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA.
109BC560Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA.
110BC635Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A.
111BC636Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A.
112BC637Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A.


113BC638Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A.
114BC640Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A.
115BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
116BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
117BD241CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
118BD242APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
119BD242BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
120BD242CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
121BD243ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
122BD243BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
123BD243CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
124BD244APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
125BD244BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
126BD244CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
127BU204NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 2.5Amp, 1300V, 36Watt.
128BU205NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W.
129BU208NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 5Amp, 1300V, 12.5Watt.
130BU208ANPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W.
131BU208DNPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W.
132BU406NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W.
133BU406DNPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W.
134BU407NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W.
135BU508ANPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W.
136BU508DNPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W.
137BY30-1000Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 30A, Vrrm = 1000V.
138BYP30-600Fast recovery diode. Inverse diode for power transistors, invertor, UPS, snubber and clamping diode. Ifav = 30A, Vrrm = 600V.
139BYV45-600Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 45A, Vrrm = 600V.
140C8550Transistors 2WOUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
141D100_04Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 400V, Vrsm = 500V.
142D100_06Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 600V, Vrsm = 700V.
143D100_08Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 800V, Vrsm = 900V.
144D100_12Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1200V, Vrsm = 1300V.
145D100_16Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1600V, Vrsm = 1600V.
146D130_02Rectifier diode. All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers. Vrrm = 200V, Vrsm = 300V.
147D130_04Rectifier diode. All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers. Vrrm = 400V, Vrsm = 500V.
148D130_08Rectifier diode. All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers. Vrrm = 800V, Vrsm = 900V.
149D130_12Rectifier diode. All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers. Vrrm = 1200V, Vrsm = 1300V.
150D130_16Rectifier diode. All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers. Vrrm = 1600V, Vrsm = 1700V.


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