| No. | Part Name | Description |
|---|
| 51 | 28C256ASC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 52 | 28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 53 | 28C256ASC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 54 | 28C256ASC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 55 | 28C256ASC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 56 | 28C256ASC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 57 | 28C256ASI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 58 | 28C256ASI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
| 59 | 28C256ASI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 60 | 28C256ASI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 61 | 28C256ASI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 62 | 28C256ASI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 63 | 28C256ASI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 64 | 28C256ASI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 65 | 28C256ASM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
| 66 | 28C256ASM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 67 | 28C256ASM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 68 | 28C256ASM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 69 | 28C256ASM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 70 | 28C256ASM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 71 | 28C256ASM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 72 | 28C256ASM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 73 | 28C256ATC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
| 74 | 28C256ATC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 75 | 28C256ATC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 76 | 28C256ATC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 77 | 28C256ATC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 78 | 28C256ATC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 79 | 28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 80 | 28C256ATC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 81 | 28C256ATI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
| 82 | 28C256ATI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 83 | 28C256ATI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 84 | 28C256ATI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 85 | 28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 86 | 28C256ATI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 87 | 28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 88 | 28C256ATI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 89 | 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
| 90 | 28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 91 | 28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
| 92 | 28C256ATM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 93 | 28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 94 | 28C256ATM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 95 | 28C256ATM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 96 | 28C256ATM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 97 | 28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
| 98 | 28LV256JC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
| 99 | 28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
| 100 | 28LV256JC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
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