2513 | BFY181P | HiRel NPN silicon RF transistor |
2514 | BFY181S | HiRel NPN silicon RF transistor |
2515 | BFY182 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
2516 | BFY182ES | HiRel NPN silicon RF transistor |
2517 | BFY182H | HiRel NPN silicon RF transistor |
2518 | BFY182P | HiRel NPN silicon RF transistor |
2519 | BFY182S | HiRel NPN silicon RF transistor |
2520 | BFY183 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
2521 | BFY183ES | HiRel NPN silicon RF transistor |
2522 | BFY183H | HiRel NPN silicon RF transistor |
2523 | BFY183P | HiRel NPN silicon RF transistor |
2524 | BFY183S | HiRel NPN silicon RF transistor |
2525 | BFY193 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
2526 | BFY193ES | HiRel NPN silicon RF transistor |
2527 | BFY193H | HiRel NPN silicon RF transistor |
2528 | BFY193P | HiRel NPN silicon RF transistor |
2529 | BFY193S | HiRel NPN silicon RF transistor |
2530 | BFY196 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
2531 | BFY196H | HiRel NPN silicon RF transistor |
2532 | BFY196P | HiRel NPN silicon RF transistor |
2533 | BFY196S | HiRel NPN silicon RF transistor |
2534 | BFY280 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
2535 | BFY280ES | HiRel NPN silicon RF transistor |
2536 | BFY280H | HiRel NPN silicon RF transistor |
2537 | BFY280P | HiRel NPN silicon RF transistor |
2538 | BFY280S | HiRel NPN silicon RF transistor |
2539 | BFY33 | NPN Transistor industrial type |
2540 | BFY34 | NPN Transistor industrial type |
2541 | BFY45 | NPN Transistor industrial type |
2542 | BFY46 | NPN Transistor industrial type |
2543 | BFY90 | NPN Transistor |
2544 | BFY90 | NPN Transistor for antenna amplifiers |
2545 | BFY90 | NPN Transistor industrial type |
2546 | BGA310 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
2547 | BGA312 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
2548 | BGA318 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
2549 | BGA420 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ¥Ø-gain block Unconditionally stable) |
2550 | BGA425 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 ¥Ø block LNA / MIX Unconditionally stable) |
2551 | BGA427 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
2552 | BGX13F-2H | IMPATT Diode |
2553 | BGX50A | Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
2554 | BGY12 | IMPATT Diode |
2555 | BGY12 | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2556 | BGY12A | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2557 | BGY12B | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2558 | BGY12D-1F | IMPATT Diode |
2559 | BGY12D-1F | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2560 | BGY12E-1G | IMPATT Diode |
2561 | BGY12E-1G | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2562 | BGY12F-2H | IMPATT Diode |
2563 | BGY12F-2H | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2564 | BGY12F-2I | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2565 | BGY12F-2J | IMPATT Diode |
2566 | BGY13 | IMPATT Diode |
2567 | BGY13 | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2568 | BGY13A | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2569 | BGY13B | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2570 | BGY13D-1E | IMPATT Diode |
2571 | BGY13D-1E | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2572 | BGY13E-1F | IMPATT Diode |
2573 | BGY13E-1F | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2574 | BGY13F-2H | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2575 | BGY13FA-1G | IMPATT Diode |
2576 | BGY13FA-1G | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2577 | BGY14 | IMPATT Diode |
2578 | BGY14 | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2579 | BGY14A | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2580 | BGY14B | Avalanche transit time diodes for the C and X bands, datasheet in german language |
2581 | BGY14D-1E | IMPATT Diode |
2582 | BGY14D-1E | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2583 | BGY14E-1F | IMPATT Diode |
2584 | BGY14E-1F | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2585 | BGY14FA-1G | IMPATT Diode |
2586 | BGY14FA1G | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2587 | BGY26 | IMPATT Diode |
2588 | BGY26D-1E | IMPATT Diode |
2589 | BGY26D-1E | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2590 | BGY26E-1F | IMPATT Diode |
2591 | BGY26E-1F | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2592 | BGY26FA-1G | IMPATT Diode |
2593 | BGY26FA-1G | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2594 | BGY27 | IMPATT Diode |
2595 | BGY27DA-1D | IMPATT Diode |
2596 | BGY27DA-1D | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2597 | BGY27DB-1E | IMPATT Diode |
2598 | BGY27DB-1E | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
2599 | BGY27E-1F | IMPATT Diode |
2600 | BGY27E-1F | Avalanche (IMPATT) diode for generation and amplification of microwave-power |
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