| No. | Part Name | Description |
|---|
| 101 | 2SC5938B | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 102 | 2SC6046 | 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
| 103 | 2SD1447 | 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
| 104 | 2SD1972 | 2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
| 105 | 2SJ125 | 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
| 106 | 2SJ145 | FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
| 107 | 2SJ498 | 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
| 108 | 2SK2880 | 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
| 109 | 2SK2881 | For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
| 110 | 2SK433 | 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
| 111 | 2SK492 | 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
| 112 | 2SK930 | FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
| 113 | M57140-01 | IPM power supply hybrid IC. Isolated DC-to-DC converter. |
| 114 | M57147AU-01 | IPM power supply hybrid IC. Isolated DC-DC converter. |
| 115 | M57159L-01 | IGBT MODULE |
| 116 | M57160AL | IGBT MODULE HYBRID IC |
| 117 | M57182N-315 | UNINSULATED DC-DC CONVERTER |
| 118 | M57182N-416 | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 180V-450V. Output specifications 16V, 300mA. |
| 119 | M57183N-316 | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 110V-180V. Output specifications 15V, 100mA; 5V, 350mA. |
| 120 | M57184N-715A | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 220V-360V. Output specifications 15V, 350mA; 5V, 200mA. |
| 121 | M57959AL-01 | IGBT MODULE GATE HYBRID IC |
| 122 | M57962AL | LGBT IC |
| 123 | M57962AL-01 | LGBT IC |
| 124 | MC2831 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 125 | MC2832 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 126 | MC2833 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 127 | MC2834 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 128 | MC2835 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
| 129 | MC2836 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 130 | MC2837 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
| 131 | MC2838 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 132 | MC2839 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
| 133 | MC2840 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
| 134 | MC2841 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
| 135 | MC2842 | MC2842 |
| 136 | MC2843 | MC2843 |
| 137 | MC2844 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 138 | MC2845 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
| 139 | MC2846 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 140 | MC2848 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
| 141 | MC2850 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
| 142 | MC2852 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 143 | MC2854 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 144 | MC961 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 145 | MC971 | For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) |
| 146 | MC981 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
| 147 | MC982 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
| 148 | RT1N137L | Transistor with resistor for switching application. Silicon NPN epitaxial type. |
| 149 | RT1N137P | Transistor with resistor for switching application. Silicon NPN epitaxial type. |
| 150 | RT1N141C | Transistor with resistor for switching application. Silicon NPN epitaxial type. |
| | |
