Hitachi Semiconductor datasheet pdf databook catalog

Hitachi Semiconductor
*Datasheet Catalog - Page 62*
	Datasheets found :: 8097	Page: \| 57 \| 58 \| 59 \| 60 \| 61 \| 62 \| 63 \| 64 \| 65 \| 66 \| 67 \|

No.	Part Name	Description
6101	HM5164165FTT-5	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6102	HM5164165FTT-6	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6103	HM5164165J-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6104	HM5164165J-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6105	HM5164165LJ-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6106	HM5164165LJ-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6107	HM5164165LTT-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6108	HM5164165LTT-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6109	HM5164165TT-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6110	HM5164165TT-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6111	HM5164405FJ-5	16M x 4-bit EDO DRAM, 50ns
6112	HM5164405FJ-6	16M x 4-bit EDO DRAM, 60ns

6113	HM5164405FLJ-5	16M x 4-bit EDO DRAM, 50ns
6114	HM5164405FLJ-6	16M x 4-bit EDO DRAM, 60ns
6115	HM5164405FLTT-5	16M x 4-bit EDO DRAM, 50ns
6116	HM5164405FLTT-6	16M x 4-bit EDO DRAM, 60ns
6117	HM5164405FTT-5	16M x 4-bit EDO DRAM, 50ns
6118	HM5164405FTT-6	16M x 4-bit EDO DRAM, 60ns
6119	HM5165165F	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6120	HM5165165FJ-5	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6121	HM5165165FJ-6	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6122	HM5165165FLJ-5	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6123	HM5165165FLJ-6	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6124	HM5165165FLTT-5	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6125	HM5165165FLTT-6	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6126	HM5165165FTT-5	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6127	HM5165165FTT-6	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
6128	HM5165165J-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6129	HM5165165J-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6130	HM5165165LJ-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6131	HM5165165LJ-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6132	HM5165165LTT-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6133	HM5165165LTT-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6134	HM5165165TT-5	64M EDO DRAM (4-Mword x 16-bit), 50ns
6135	HM5165165TT-6	64M EDO DRAM (4-Mword x 16-bit), 60ns
6136	HM5165405FJ-5	16M x 4-bit EDO DRAM, 50ns
6137	HM5165405FJ-6	16M x 4-bit EDO DRAM, 60ns
6138	HM5165405FLJ-5	16M x 4-bit EDO DRAM, 50ns
6139	HM5165405FLJ-6	16M x 4-bit EDO DRAM, 60ns
6140	HM5165405FLTT-5	16M x 4-bit EDO DRAM, 50ns
6141	HM5165405FLTT-6	16M x 4-bit EDO DRAM, 60ns
6142	HM5165405FTT-5	16M x 4-bit EDO DRAM, 50ns
6143	HM5165405FTT-6	16M x 4-bit EDO DRAM, 60ns
6144	HM51S4260AJ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory
6145	HM51S4260AJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory
6146	HM51S4260AJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6147	HM51S4260ALJ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory
6148	HM51S4260ALJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory
6149	HM51S4260ALJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory
6150	HM51S4260ALRR-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6151	HM51S4260ALRR-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory
6152	HM51S4260ALRR-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory
6153	HM51S4260ALTT-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory
6154	HM51S4260ALTT-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory
6155	HM51S4260ALTT-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory
6156	HM51S4260ALZ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory
6157	HM51S4260ALZ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory
6158	HM51S4260ALZ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory
6159	HM51S4260ARR-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory
6160	HM51S4260ARR-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6161	HM51S4260ARR-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory
6162	HM51S4260ATT-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory
6163	HM51S4260ATT-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory
6164	HM51S4260ATT-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory
6165	HM51S4260AZ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory
6166	HM51S4260AZ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory
6167	HM51S4260AZ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory
6168	HM51S4260CJ-6	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6169	HM51S4260CJ-6R	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory
6170	HM51S4260CJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory
6171	HM51S4260CJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6172	HM51S4260CLJ-6	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory
6173	HM51S4260CLJ-6R	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory
6174	HM51S4260CLJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory
6175	HM51S4260CLJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory
6176	HM51S4260CLTT-6	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory
6177	HM51S4260CLTT-6R	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory
6178	HM51S4260CLTT-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory
6179	HM51S4260CLTT-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory
6180	HM51S4260CTT-6	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory
6181	HM51S4260CTT-6R	60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory
6182	HM51S4260CTT-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory
6183	HM51S4260CTT-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory
6184	HM51S4800AJ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6185	HM51S4800AJ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6186	HM51S4800ALJ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6187	HM51S4800ALJ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6188	HM51S4800ALRR-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6189	HM51S4800ALRR-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6190	HM51S4800ALTT-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6191	HM51S4800ALTT-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6192	HM51S4800ARR-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6193	HM51S4800ARR-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6194	HM51S4800ATT-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6195	HM51S4800ATT-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6196	HM51S4800CJ-6	60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6197	HM51S4800CJ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6198	HM51S4800CJ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6199	HM51S4800CJI-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
6200	HM51S4800CJI-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory

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Hitachi Semiconductor

Datasheet Catalog - Page 62