| 5813 | HL6325 | Low Operating Current Visible Laser Diode |
| 5814 | HL6325/26G | Low Operating Current Visible Laser Diode |
| 5815 | HL6325G | Low Operating Current Visible Laser Diode |
| 5816 | HL6326 | Low Operating Current Visible Laser Diode |
| 5817 | HL6326G | Low Operating Current Visible Laser Diode |
| 5818 | HL6331G | (HL6332G) Low Operating Current Visible Laser Diode |
| 5819 | HL6333MG | (HL6334MG) Low Operating Current Visible Laser Diode |
| 5820 | HL6334MG | Low Operating Current Visible Laser Diode |
| 5821 | HL6335G | (HL6336G) Circular Beam Low Operating Current |
| 5822 | HL6336G | Circular Beam Low Operating Current |
| 5823 | HL6339G | (HL6342G) 633nm Lasing Laser Diode |
| 5824 | HL6342G | 633nm Lasing Laser Diode |
| 5825 | HL6503MG | Visible High Power Laser Diode for DVD-RAM |
| 5826 | HL6714G | AlGaInP Laser Diode |
| 5827 | HL6724MG | The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure. |
| 5828 | HL6738MG | Visible High Power Laser Diode |
| 5829 | HL7851G | GaAlAs Laser Diode |
| 5830 | HL7859MG | Visible High Power Laser Diode |
| 5831 | HL8325G | GaAlAs Laser Diode |
| 5832 | HM10500-15 | +0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
| 5833 | HM48416AP | 16384 word x 4 Bit Dynamic RAM |
| 5834 | HM5112805F-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5835 | HM5112805FLTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5836 | HM5112805FTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5837 | HM5113805F-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5838 | HM5113805FLTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5839 | HM5113805FTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 5840 | HM5116100 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| 5841 | HM5116100S | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| 5842 | HM5116100S-6 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| 5843 | HM5116100S-7 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| 5844 | HM51258P | 262144 word x 1 Bit Static Column CMOS DRAM |
| 5845 | HM514100DLS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns |
| 5846 | HM514100DLS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns |
| 5847 | HM514100DLS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns |
| 5848 | HM514100DS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns |
| 5849 | HM514100DS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns |
| 5850 | HM514100DS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns |
| 5851 | HM514258AJP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5852 | HM514258AJP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5853 | HM514258AJP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5854 | HM514258AJP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5855 | HM514258AJP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5856 | HM514258AP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5857 | HM514258AP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5858 | HM514258AP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5859 | HM514258AP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5860 | HM514258AP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5861 | HM514258AZP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5862 | HM514258AZP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5863 | HM514258AZP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5864 | HM514258AZP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5865 | HM514258AZP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
| 5866 | HM514260AJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory |
| 5867 | HM514260AJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory |
| 5868 | HM514260AJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory |
| 5869 | HM514260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory |
| 5870 | HM514260ALJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory |
| 5871 | HM514260ALJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory |
| 5872 | HM514260ALRR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory |
| 5873 | HM514260ALRR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory |
| 5874 | HM514260ALRR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory |
| 5875 | HM514260ALTT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory |
| 5876 | HM514260ALTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory |
| 5877 | HM514260ALTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory |
| 5878 | HM514260ALZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory |
| 5879 | HM514260ALZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory |
| 5880 | HM514260ALZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory |
| 5881 | HM514260ARR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory |
| 5882 | HM514260ARR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory |
| 5883 | HM514260ARR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory |
| 5884 | HM514260ATT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory |
| 5885 | HM514260ATT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory |
| 5886 | HM514260ATT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory |
| 5887 | HM514260AZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory |
| 5888 | HM514260AZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory |
| 5889 | HM514260AZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory |
| 5890 | HM514260CJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory |
| 5891 | HM514260CJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory |
| 5892 | HM514260CJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory |
| 5893 | HM514260CJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory |
| 5894 | HM514260CLJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory |
| 5895 | HM514260CLJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory |
| 5896 | HM514260CLJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory |
| 5897 | HM514260CLJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory |
| 5898 | HM514260CLTT-6 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory |
| 5899 | HM514260CLTT-6R | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory |
| 5900 | HM514260CLTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory |
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