| No. | Part Name | Description |
|---|
| 201 | 2N6246 | Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
| 202 | 2N6247 | Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
| 203 | 2N6248 | Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
| 204 | 2N6249 | 300V, 30A, 175W silicon N-P-N switcing transistor. |
| 205 | 2N6250 | 375V, 30A, 175W silicon N-P-N switcing transistor. |
| 206 | 2N6251 | 450V, 30A, 175W silicon N-P-N switcing transistor. |
| 207 | 2N6253 | High-power silicon N-P-N transistor. 55V, 115W. |
| 208 | 2N6254 | High-power silicon N-P-N transistor. 100V, 150W. |
| 209 | 2N6259 | High voltage, high power transistor. 170V, 250W. |
| 210 | 2N6262 | High voltage silicon N-P-N transistor. 170V, 150W. |
| 211 | 2N6263 | Medium power silicon N-P-N transistor. 140V, 20W. |
| 212 | 2N6264 | Medium power silicon N-P-N transistor. 170V, 50W. |
| 213 | 2N6282 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
| 214 | 2N6283 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
| 215 | 2N6284 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
| 216 | 2N6285 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
| 217 | 2N6286 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
| 218 | 2N6287 | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
| 219 | 2N6288 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
| 220 | 2N6289 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
| 221 | 2N6290 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
| 222 | 2N6291 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
| 223 | 2N6292 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
| 224 | 2N6293 | Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
| 225 | 2N6342A | 12-A silicon triac. 200 V. |
| 226 | 2N6343A | 12-A silicon triac. 400 V. |
| 227 | 2N6344A | 12-A silicon triac. 600 V. |
| 228 | 2N6345A | 12-A silicon triac. 800 V. |
| 229 | 2N6346A | 12-A silicon triac. 200 V. |
| 230 | 2N6347A | 12-A silicon triac. 400 V. |
| 231 | 2N6348A | 12-A silicon triac. 600 V. |
| 232 | 2N6349A | 12-A silicon triac. 800 V. |
| 233 | 2N6354 | 120V, 10A, 140W silicon N-P-N planar transistor. |
| 234 | 2N6371 | High-power silicon N-P-N transistor. 50V, 117W. |
| 235 | 2N6383 | 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
| 236 | 2N6384 | 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
| 237 | 2N6385 | 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
| 238 | 2N6386 | 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
| 239 | 2N6387 | 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
| 240 | 2N6388 | 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
| 241 | 2N6394 | 12A silicon controlled rectifier. Vrsom 75V. |
| 242 | 2N6395 | 12A silicon controlled rectifier. Vrsom 125V. |
| 243 | 2N6396 | 12A silicon controlled rectifier. Vrsom 250V. |
| 244 | 2N6397 | 12A silicon controlled rectifier. Vrsom 450V. |
| 245 | 2N6398 | 12A silicon controlled rectifier. Vrsom 650V. |
| 246 | 2N6400 | 16A silicon controlled rectifier. Vrsom 75V. |
| 247 | 2N6401 | 16A silicon controlled rectifier. Vrsom 125V. |
| 248 | 2N6402 | 16A silicon controlled rectifier. Vrsom 250V. |
| 249 | 2N6403 | 16A silicon controlled rectifier. Vrsom 450V. |
| 250 | 2N6404 | 16A silicon controlled rectifier. Vrsom 650V. |
| | |
