STE250N06 datasheet
STE250N06 manufactured by:
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Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV | Download STE250N06 datasheet from SGS Thomson Microelectronics |
pdf 336 kb |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE | Download STE250N06 datasheet from ST Microelectronics |
pdf 335 kb |
STE24NA100 | View STE250N06 to our catalog | STE250NS10 |