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STE250N06 datasheet

STE250N06 manufactured by:
SGS Thomson Microelectronics Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV
STE250N06 datasheet pdf SGS Thomson Microelectronics
Download STE250N06 datasheet from
SGS Thomson Microelectronics
pdf
 336 kb 
ST Microelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
STE250N06 datasheet pdf ST Microelectronics
Download STE250N06 datasheet from
ST Microelectronics
pdf
 335 kb 
STE24NA100 View STE250N06 to our catalog STE250NS10




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