SGSD310 datasheet
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SGSD310 manufactured by:
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150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor Others with the same file for datasheet: SGSD311FI |
Download SGSD310 datasheet from SGS Thomson Microelectronics |
pdf 298 kb |
| SGSD200 | View SGSD310 to our catalog | SGSD311 |