K4E160811D-B datasheet
K4E160811D-B manufactured by:
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2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Others with the same file for datasheet: K4E160812D-B, K4E160812D-F, K4E170811D-B, K4E170811D-F, K4E170812D-B |
Download K4E160811D-B datasheet from Samsung Electronic |
pdf 258 kb |
K4E160811D | View K4E160811D-B to our catalog | K4E160811D-F |