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IRF822 manufactured by:
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Fairchild SemiconductorN-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V

Others with the same file for datasheet:
IRF420, IRF420-423, IRF421, IRF422, IRF423
Download IRF822 datasheet from
Fairchild Semiconductor
 162 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.

Others with the same file for datasheet:
IRF820, IRF821, IRF823
Download IRF822 datasheet from
General Electric Solid State
 169 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF822 datasheet from
Samsung Electronic
 327 kb 
SGS Thomson MicroelectronicsN-channel enhancement mode power MOS transistor, 500V, 2.8A

Others with the same file for datasheet:
Download IRF822 datasheet from
SGS Thomson Microelectronics
 175 kb 
IRF821FI View IRF822 to our catalog IRF822FI

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