DatasheetCatalog.com Logo
  |   Home   |   All manufacturers   |   By Category   |  
Versiunea Romaneasca Russian version Versão portuguese Versione italiana
Versión española Deutsche Version Version française

   
Quick jump to: 1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UAUp1 Up level 1
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 4001 Up2 Up level 2

IRF822 manufactured by:
Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Fairchild SemiconductorN-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V

Others with the same file for datasheet:
IRF420, IRF420-423, IRF421, IRF422, IRF423
Download IRF822 datasheet from
Fairchild Semiconductor
pdf
 162 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.

Others with the same file for datasheet:
IRF820, IRF821, IRF823
Download IRF822 datasheet from
General Electric Solid State
pdf
 169 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF822 datasheet from
Samsung Electronic
pdf
 327 kb 
SGS Thomson MicroelectronicsN-channel enhancement mode power MOS transistor, 500V, 2.8A

Others with the same file for datasheet:
IRF820FI
Download IRF822 datasheet from
SGS Thomson Microelectronics
pdf
 175 kb 
IRF821FI View IRF822 to our catalog IRF822FI




© 2020 - Datasheet Catalog com