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IRF720 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Fairchild Semiconductor3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Download IRF720 datasheet from
Fairchild Semiconductor
pdf
 96 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A.
Others with the same file for datasheet:
IRF721, IRF722, IRF723,
Download IRF720 datasheet from
General Electric Solid State
pdf
 170 kb 
International Rectifier400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Others with the same file for datasheet:
IRF720PBF,
Download IRF720 datasheet from
International Rectifier
pdf
 177 kb 
Intersil3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET Download IRF720 datasheet from
Intersil
pdf
 59 kb 
SGS Thomson MicroelectronicsN-channel MOSFET, 400V, 3.3A
Others with the same file for datasheet:
IRF721F1, IRF722F1, IRF720F1, IRF723F1,
Download IRF720 datasheet from
SGS Thomson Microelectronics
pdf
 344 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF720 datasheet from
Samsung Electronic
pdf
 278 kb 
IRF713View IRF720 to our catalogIRF7201




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