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IRF720 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
International Rectifier400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Others with the same file for datasheet:
IRF720PBF,
Download IRF720 datasheet from
International Rectifier
pdf
177 kb
Samsung ElectronicN-CHANNEL POWER MOSFETS

Others with the same file for datasheet:
IRF721,
Download IRF720 datasheet from
Samsung Electronic
pdf
278 kb
Intersil3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET Download IRF720 datasheet from
Intersil
pdf
59 kb
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A.

Others with the same file for datasheet:
IRF723, IRF722,
Download IRF720 datasheet from
General Electric Solid State
pdf
170 kb
Fairchild Semiconductor3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Download IRF720 datasheet from
Fairchild Semiconductor
pdf
96 kb
SGS Thomson MicroelectronicsN-channel MOSFET, 400V, 3.3A

Others with the same file for datasheet:
IRF720F1, IRF721F1, IRF722F1, IRF723F1,
Download IRF720 datasheet from
SGS Thomson Microelectronics
pdf
344 kb
IRF713View IRF720 to our catalogIRF7201




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