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IRF630 manufactured by:
Fairchild Semiconductor9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs Download IRF630 datasheet from
Fairchild Semiconductor
pdf
 134 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.

Others with the same file for datasheet:
IRF631, IRF632, IRF633
Download IRF630 datasheet from
General Electric Solid State
pdf
 167 kb 
International Rectifier200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Download IRF630 datasheet from
International Rectifier
pdf
 182 kb 
Intersil9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

Others with the same file for datasheet:
RF1S630SM
Download IRF630 datasheet from
Intersil
pdf
 67 kb 


New Jersey SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube Download IRF630 datasheet from
New Jersey Semiconductor
pdf
 852 kb 
PhilipsN-channel TrenchMOS(tm) transistor Download IRF630 datasheet from
Philips
pdf
 103 kb 
SGS Thomson MicroelectronicsN-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET

Others with the same file for datasheet:
IRF630FP
Download IRF630 datasheet from
SGS Thomson Microelectronics
pdf
 109 kb 
SGS Thomson MicroelectronicsN - CHANNEL 200V - 0.35W - 9A - TO-220/FP MESH OVERLAY MOSFET Download IRF630 datasheet from
SGS Thomson Microelectronics
pdf
 109 kb 
ST MicroelectronicsN-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Download IRF630 datasheet from
ST Microelectronics
pdf
 349 kb 
IRF624STRR View IRF630 to our catalog IRF630-006




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