IRF620 datasheet
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IRF620 manufactured by:
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5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET | 
Download IRF620 datasheet from Fairchild Semiconductor |
pdf 121 kb |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. Others with the same file for datasheet: IRF621, IRF622, IRF623 |
Download IRF620 datasheet from General Electric Solid State |
pdf 166 kb |
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200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Others with the same file for datasheet: IRF620PBF |
Download IRF620 datasheet from International Rectifier |
pdf 182 kb |
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5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET | Download IRF620 datasheet from Intersil |
pdf 59 kb |
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Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB | Download IRF620 datasheet from New Jersey Semiconductor |
pdf 107 kb |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Others with the same file for datasheet: IRF620FI |
Download IRF620 datasheet from SGS Thomson Microelectronics |
pdf 189 kb |
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | Download IRF620 datasheet from SGS Thomson Microelectronics |
pdf 189 kb |
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OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN | Download IRF620 datasheet from ST Microelectronics |
pdf 331 kb |
| IRF6156 | View IRF620 to our catalog | IRF6201 |