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IRF252 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A.

Others with the same file for datasheet:
IRF250, IRF251, IRF253
Download IRF252 datasheet from
General Electric Solid State
 200 kb 
Intersil25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Download IRF252 datasheet from
 63 kb 
New Jersey SemiconductorTrans MOSFET 200V 25A 3-Pin(2+Tab) TO-3o

Others with the same file for datasheet:
IRF250CF, IRF250FI, IRF250R, IRF252R
Download IRF252 datasheet from
New Jersey Semiconductor
 135 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS- Download IRF252 datasheet from
Samsung Electronic
 220 kb 
IRF251View IRF252 to our catalogIRF252R

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