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IRF252 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Intersil25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs

Others with the same file for datasheet:
IRF253, IRF251,
Download IRF252 datasheet from
63 kb
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A.

Others with the same file for datasheet:
Download IRF252 datasheet from
General Electric Solid State
200 kb
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF252 datasheet from
Samsung Electronic
220 kb
IRF251View IRF252 to our catalogIRF253

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