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IRF251 datasheet

IRF251 manufactured by:
General Electric Solid State N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A.

Others with the same file for datasheet:
IRF250, IRF253

IRF251 datasheet pdf General Electric Solid State
Download IRF251 datasheet from
General Electric Solid State
pdf
 200 kb 
Intersil 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs
IRF251 datasheet pdf Intersil
Download IRF251 datasheet from
Intersil
pdf
 63 kb 
New Jersey Semiconductor Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3

Others with the same file for datasheet:
IRF250CF, IRF250FI, IRF250R, IRF252R

IRF251 datasheet pdf New Jersey Semiconductor
Download IRF251 datasheet from
New Jersey Semiconductor
pdf
 135 kb 
Samsung Electronic N-CHANNEL POWER MOSFETS Download IRF251 datasheet from
Samsung Electronic
pdf
 220 kb 
IRF250SMD View IRF251 to our catalog IRF252




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